Local strain in tunneling transistors based on graphene nanoribbons

Applied Physics Letters

Volumn 97, Issue 7, 2010, Pages

  Lu, Yang ^a   Guo, Jing ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC LIMIT; BAND TO BAND TUNNELING; GRAPHENE NANO-RIBBON; GRAPHENE NANORIBBONS; LOCAL STRAINS; OFF-CURRENT; ON-CURRENTS; QUANTUM TRANSPORT SIMULATIONS; ROOM TEMPERATURE; SUBTHRESHOLD SLOPE; THIN BODY; TUNNELING BARRIER; TUNNELING FET; TUNNELING JUNCTIONS;

BALLISTICS; GRAPHENE; HUBBARD MODEL; MESFET DEVICES; MONOLAYERS; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS;

FIELD EFFECT TRANSISTORS;

EID: 77956015193     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3479915     Document Type: Article

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