Graphene electronics: Materials, devices, and circuits

Proceedings of the IEEE

Volumn 101, Issue 7, 2013, Pages 1620-1637

  Wu, Yanqing ^a,b   Farmer, Damon B ^a   Xia, Fengnian ^a   Avouris, Phaedon ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Current gain; field effect transistor (FET); graphene analog integrated circuits (ICs); graphene nanoelectronics; power gain; voltage gain

Indexed keywords

ANALOG INTEGRATED CIRCUITS; CUTOFF FREQUENCY; ELECTRIC FIELD EFFECTS; ELECTRONIC STRUCTURE; FIELD EFFECT TRANSISTORS; GAIN MEASUREMENT; GRAPHENE TRANSISTORS; MIXER CIRCUITS; NANOELECTRONICS; TIMING CIRCUITS; TRANSPORT PROPERTIES; VOLTAGE REGULATORS;

ADVANCED APPLICATIONS; CURRENT GAINS; ELECTRICAL CHARACTERISTIC; ELECTRONIC TRANSPORT PROPERTIES; INTEGRATED CIRCUITS (ICS); MAXIMUM OSCILLATION FREQUENCY; POWER GAINS; VOLTAGE GAIN;

GRAPHENE;

EID: 84879879376     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2013.2260311     Document Type: Article

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