Graphene nanomesh transistor with high on/off ratio and good saturation behavior

Applied Physics Letters

Volumn 103, Issue 18, 2013, Pages

  Berrada, Salim ^a   Hung Nguyen, Viet ^a,b,c   Querlioz, Damien ^a   Saint Martin, Jérôme ^a   Alarcón, Alfonso ^a   Chassat, Christophe ^a   Bournel, Arnaud ^a   Dollfus, Philippe ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b INSTITUTE OF PHYSICS   (Viet Nam)

^c INAC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE ARCHITECTURES; DEVICE OPERATIONS; MAXIMUM OSCILLATION FREQUENCY; NANOMESH; OFF CURRENT; ON/OFF RATIO; SATURATION BEHAVIOR; VOLTAGE GAIN;

CUTOFF FREQUENCY; GRAPHENE;

TRANSISTORS;

EID: 84889663732     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4828496     Document Type: Article

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