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Volumn 107, Issue 12, 2010, Pages

Evaluation of GeO desorption behavior in the metal/GeO2/Ge structure and its improvement of the electrical characteristics

Author keywords

[No Author keywords available]

Indexed keywords

DESORPTION BEHAVIOR; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTY; FLAT-BAND VOLTAGE SHIFT; GE SUBSTRATES; LOW TEMPERATURES; MINORITY CARRIER GENERATION; POST-METALLIZATION ANNEALING; THERMAL OXIDATION;

EID: 77954197457     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3452367     Document Type: Article
Times cited : (40)

References (16)
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  • 2
    • 33947455109 scopus 로고
    • JACSAT 0002-7863. 10.1021/ja01142a056
    • W. L. Jolly and W. M. Latimer, J. Am. Chem. Soc. JACSAT 0002-7863 74, 5757 (1952). 10.1021/ja01142a056
    • (1952) J. Am. Chem. Soc. , vol.74 , pp. 5757
    • Jolly, W.L.1    Latimer, W.M.2
  • 3
    • 0037856203 scopus 로고
    • JESOAN 0013-4651. 10.1149/1.2428524
    • J. T. Law and P. S. Meigs, J. Electrochem. Soc. JESOAN 0013-4651 104, 154 (1957). 10.1149/1.2428524
    • (1957) J. Electrochem. Soc. , vol.104 , pp. 154
    • Law, J.T.1    Meigs, P.S.2
  • 9
    • 33847119423 scopus 로고    scopus 로고
    • Role of germanium nitride interfacial layers in Hf O2 /germanium nitride/germanium metal-insulator-semiconductor structures
    • DOI 10.1063/1.2679941
    • T. Maeda, M. Nishizawa, Y. Morita, and S. Takagi, Appl. Phys. Lett. APPLAB 0003-6951 90, 072911 (2007). 10.1063/1.2679941 (Pubitemid 46280715)
    • (2007) Applied Physics Letters , vol.90 , Issue.7 , pp. 072911
    • Maeda, T.1    Nishizawa, M.2    Morita, Y.3    Takagi, S.4
  • 10
    • 33947317756 scopus 로고    scopus 로고
    • Electrical properties of germanium/metal-oxide gate stacks with atomic layer deposition grown hafnium-dioxide and plasma-synthesized interface layers
    • DOI 10.1063/1.2472197
    • T. Sugawara, Y. Oshima, R. Sreenivasan, and P. C. Mclntyre, Appl. Phys. Lett. APPLAB 0003-6951 90, 112912 (2007). 10.1063/1.2472197 (Pubitemid 46439820)
    • (2007) Applied Physics Letters , vol.90 , Issue.11 , pp. 112912
    • Sugawara, T.1    Oshima, Y.2    Sreenivasan, R.3    McIntyre, P.C.4
  • 11
    • 17444437794 scopus 로고    scopus 로고
    • Effects of elastic-electron scattering on measurements of silicon dioxide film thicknesses by X-ray photoelectron spectroscopy
    • DOI 10.1016/S0368-2048(00)00254-1
    • C. J. Powell and A. Jablonski, J. Electron Spectrosc. Relat. Phenom. JESRAW 0368-2048 114-116, 1139 (2001). 10.1016/S0368-2048(00)00254-1 (Pubitemid 32264034)
    • (2001) Journal of Electron Spectroscopy and Related Phenomena , vol.114-116 , pp. 1139-1143
    • Powell, C.J.1    Jablonski, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.