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Volumn 258, Issue 8, 2012, Pages 3444-3449

Stability of La 2 O 3 and GeO 2 passivated Ge surfaces during ALD of ZrO 2 high-k dielectric

(8) Bethge, O a Henkel, C a Abermann, S b Pozzovivo, G a Stoeger Pollach, M a Werner, W S M a Smoliner, J a Bertagnolli, E a

a VIENNA UNIVERSITY OF TECHNOLOGY (Austria)

b AIT AUSTRIAN INSTITUTE OF TECHNOLOGY (Austria)

Author keywords

ALD; Ge; MOS capacitor

Indexed keywords

ATOMIC LAYER DEPOSITION; CAPACITORS; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; GERMANIUM OXIDES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HIGH-K DIELECTRIC; INTERFACE STATES; LANTHANUM OXIDES; MOS CAPACITORS; PASSIVATION; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIA;

CHEMICAL DECOMPOSITION; ELECTRICAL CHARACTERIZATION; FREQUENCY-DEPENDENT CAPACITANCE; INTERFACE TRAP DENSITY; INTERFACIAL TRAP DENSITIES; LANTHANUM GERMANATE; SUBSTRATE TEMPERATURE; SURFACE PASSIVATION;

GERMANIUM;

EID: 84856228619 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2011.11.094 Document Type: Article

Times cited : (30)

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