Epitaxial germanium on soi substrate and its application of fabricating high i on IOFF ratio Ge FinFETs

IEEE Transactions on Electron Devices

Volumn 60, Issue 6, 2013, Pages 1878-1883

  Chung, Cheng Ting ^a   Chen, Che Wei ^a   Lin, Jyun Chih ^a   Wu, Che Chen ^a   Chien, Chao Hsin ^a,b   Luo, Guang Li ^c   Kei, Chi Chung ^c   Hsiao, Chien Nan ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c INSTRUMENT TECHNOLOGY RESEARCH CENTER   (Taiwan)

Author keywords

Epitaxial Ge on silicon on insulator (SOI) substrates; fin field effect transistors (FinFETs); forming gas annealing; Ge CMOS; germanium

Indexed keywords

DRAIN-INDUCED BARRIER LOWERING; FIN FIELD-EFFECT TRANSISTORS; FINFETS; FORMING GAS ANNEALING; SHORT-CHANNEL CONTROLS; SILICON-ON-INSULATOR SUBSTRATES; SUBTHRESHOLD SWING; TRI-GATE STRUCTURES;

EPITAXIAL GROWTH; FINS (HEAT EXCHANGE); INTEGRATED CIRCUITS; MOSFET DEVICES; SUBSTRATES;

GERMANIUM;

EID: 84878119321     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2259173     Document Type: Article

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