Erratum: Low-Temperature Microwave Annealing Processes for Future IC Fabrication - A Review (IEEE Trans. Electron Devices (2014) 61:3 (651–665) DOI: 10.1109/TED.2014.2300898);Low-temperature microwave annealing processes for future IC fabrication-A review

IEEE Transactions on Electron Devices

Volumn 61, Issue 3, 2014, Pages 651-665

  Lee, Yao Jen ^a,b   Cho, Ta Chun ^c   Chuang, Shang Shiun ^c   Hsueh, Fu Kuo ^c,d   Lu, Yu Lun ^c   Sung, Po Jung ^c,d   Chen, Hsiu Chih ^d   Current, Michael I ^d   Tseng, Tseung Yuen ^c   Chao, Tien Sheng ^c   Hu, Chenming ^e   Yang, Fu Liang ^f  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d Current Scientific   (United States)

^e University of California Berkeley   (United States)

^f ACADEMIA SINICA   (Taiwan)

Author keywords

Dopant activation; low temperature; microwave; microwave annealing (MWA); NiGe; solid phase epitaxial growth (SPEG); temperature effect; uniformity

Indexed keywords

CHEMICAL ACTIVATION; DOPING (ADDITIVES); MICROWAVE HEATING; NICKEL COMPOUNDS; RAPID THERMAL ANNEALING; SHEET RESISTANCE; SILICON COMPOUNDS; SILICON WAFERS; SUBSTRATES; TEMPERATURE; ULTRATHIN FILMS;

ANNEALING PROCESS; DOPANT ACTIVATION; LOWS-TEMPERATURES; MICROWAVE ANNEALING; SI SUBSTRATES; SOLID PHASE EPITAXIAL GROWTH; SOLID-PHASE EPITAXIAL GROWTH; ULTRA-THIN; UNIFORMITY;

MICROWAVES;

EID: 84896791487     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/TED.2023.3272843     Document Type: Erratum

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