Amorphous-layer regrowth and activation of P and as implanted Si by low-temperature microwave annealing

IEEE Transactions on Electron Devices

Volumn 58, Issue 7, 2011, Pages 2088-2093

  Hsueh, Fu Kuo ^a,b   Lee, Yao Jen ^a,c   Lin, Kun Lin ^a   Current, Michael I ^d   Wu, Ching Yi ^e   Chao, Tien Sheng ^b  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^d Current Scientific   (United States)

^e Bayzu Precision Co   (Taiwan)

Author keywords

Low temperature; microwave annealing; solid phase epitaxily growth (SPEG)

Indexed keywords

AMORPHOUS LAYER; AMORPHOUS/CRYSTALLINE INTERFACE; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DOPANT DEACTIVATION; DOSE RANGE; FOUR-POINT PROBE; KINETICS AND MECHANISM; LOW TEMPERATURES; MICROWAVE ANNEALING; MICROWAVE METHODS; REGROWTH PROCESS; RESISTANCE VALUES; SOLID-PHASE; SPREADING RESISTANCE PROFILING; THERMAL PROCESS;

ANNEALING; ARSENIC; DOPING (ADDITIVES); ELECTRIC RESISTANCE; MICROWAVE HEATING; MICROWAVES; PHOSPHORUS; SECONDARY ION MASS SPECTROMETRY; SHEET RESISTANCE; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS SILICON;

EID: 79959530790     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2132801     Document Type: Article

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