Electromagnetic annealing for the 100 nm technology node

IEEE Electron Device Letters

Volumn 23, Issue 3, 2002, Pages 127-129

  Thompson, K ^a   Booske, J H ^a   Gianchandani, Y B ^a   Cooper, R F ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

Anneal; Dopant; Radiation; Rapid

Indexed keywords

ACTIVATION ANALYSIS; DOPING (ADDITIVES); ELECTRIC RESISTANCE; MAGNETOELECTRIC EFFECTS; OPTIMIZATION; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS;

ELECTROMAGNETIC INDUCTION HEATING (EMIH);

RAPID THERMAL ANNEALING;

EID: 0036503273     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.988813     Document Type: Article

References (5)

1. 2 ion implants
2. 1.2 V, sub-0.09 micron gate length CMOS technology
3. Plasma Doping system for 200 and 300 mm wafers
4. Microwave ponderomotive forces in solid-state ionic plasmas
5. RF and microwave annealing for ultra shallow junction formation