Topics in solid phase epitaxy: Strain, structure and geometry

Materials Science and Engineering R: Reports

Volumn 16, Issue 1, 1996, Pages 1-42

  Hellman, Olof ^a  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Geometry; Solid phase epitaxy; Strain; Structure

Indexed keywords

ACTIVATION ENERGY; AMORPHIZATION; AMORPHOUS FILMS; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; CRYSTALLIZATION; INTERFACIAL ENERGY; PHASE INTERFACES; REACTION KINETICS; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; STRAIN;

HAYNES' STICKY LINK MODEL; INTERFACIAL ROUGHENING; SILICON GERMANIUM ALLOYS; SILICON GERMANIUM CARBIDE; SOLID PHASE EPITAXY; THERMODYNAMIC TREATMENT;

EPITAXIAL GROWTH;

EID: 0029733573     PISSN: 0927796X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0927-796X(96)80001-5     Document Type: Review

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