A low-temperature microwave anneal process for boron-doped ultrathin Ge epilayer on Si substrate

IEEE Electron Device Letters

Volumn 30, Issue 2, 2009, Pages 123-125

  Lee, Yao Jen ^a   Hsueh, Fu Kuo ^a   Huang, Shih Chiang ^a   Kowalski, Jeff M ^b   Kowalski, Jeff E ^b   Cheng, Alex T Y ^c   Koo, Ann ^c   Luo Guang Li, G L ^a   Wu, Ching Yi ^d  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b DSG Technologies Inc   (United States)

^c Frontier Semiconductor   (United States)

^d DA YEH UNIVERSITY   (Taiwan)

Author keywords

Ge; Low temperature anneal; Microwave anneal; Rapid thermal anneal (RTA)

Indexed keywords

BORON; ELECTRIC RESISTANCE; GERMANIUM; RAPID THERMAL PROCESSING; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES;

ANNEAL PROCESS; ANNEAL TEMPERATURES; BORON DIFFUSIONS; BORON-DOPED; CONCENTRATION LEVELS; CRYSTALLINE STRUCTURES; GE; GE EPILAYERS; HIGH MOBILITIES; LOW-TEMPERATURE ANNEAL; MICROWAVE ANNEAL; MICROWAVE PROCESSING; NANO-SCALE TRANSISTORS; RAPID THERMAL ANNEAL (RTA); SI SUBSTRATES; TEM IMAGES; ULTRA SHALLOW JUNCTIONS; XRD SIGNALS;

MICROWAVES;

EID: 59649125493     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2009474     Document Type: Article

References (16)

1. International Technology Roadmap for Semiconductors, 2007. [Online]. Available: http://www.itrs.net/
2. x thermal barrier," IEEE Electron Device Lett., vol. 22, no. 3, pp. 121-123, Mar. 2001.
3. Q. Zhang, J. Huang, N. Wu, G. Chen, M. Hong, L. K. Bera, and C. Zhu, "Drive-current enhancement in Ge n-channel MOSFET using laser annealing for source/drain activation," IEEE Electron Device Lett., vol. 27, no. 9, pp. 728-730, Sep. 2006.
4. x source/drain defectivity," in Proc. 15th IEEE Int. Conf. Adv. Thermal Process. Semicond. RTP, 2007, pp. 307-315.
5. Y. V. Bykov et al., "Spike annealing of silicon wafers using millimeter-wave power," in Proc. IEEE 9th Int. Conf. Adv. Process. Semicond. RTP, Anchorage, AK, 2001, pp. 232-239.
6. A. T. Fiory, H.-J. Gossmann, C. Rafferty, P. Frisella, J. Hebb, and J. Jackson, "Ultra-shallow junctions and the effect of ramp-up rate during spike anneals in lamp-based and hot-walled RTP systems," in Proc. Int. Conf. 22-26 June Ion Implantation Technol., Kyoto, Japan, 1998, pp. 22-25.
7. C. F. Nieh, K. C. Ku, C. H. Chen, H. Chang, L. T. Wang, L. P. Huang, Y. M. Sheu, C. C. Wang, T. L. Lee, S. C. Chen, M. S. Liang, and J. Gong, "Millisecond anneal and short-channel effect control in Si CMOS transistor performance," IEEE Electron Device Lett., vol. 27, no. 12, pp. 969-971, Dec. 2006.
8. C. C. Yeo, B. J. Cho, F. Gao, S. J. Lee, M. H. Lee, C.-Y. Yu, C. W. Liu, L. J. Tang, and T. W. Lee, "Electron mobility enhancement using ultrathin pure Ge on Si substrate," IEEE Electron Device Lett., vol. 26, no. 10, pp. 761-763, Oct. 2005.
9. U. Konig and F. Schaffler, "p-type Ge-channel MODFETs with high transconductance grown on Si substrates," IEEE Electron Device Lett. vol. 14, no. 4, pp. 205-207, Apr. 1993.
10. x layers (0.3 < × < 0.4) and their significance for SiGe pMOSFET performance," IEEE Trans. Electron Devices, vol. 48, no. 8, pp. 1826-1832, Aug. 2001.
11. X. Chen, K.-C. Liu, Q. C. Ouyang, S. K. Jayanarayanan, and S. K. Banerjee, "Hole and electron mobility enhancement in strained SiGe vertical MOSFETs," IEEE Trans. Electron Devices, vol. 48, no. 9, pp. 1975-1980, Sep. 2001.
12. 1-xGe layers (0.3 < × < 0.4) grown on Si," J. Appl. Phys., vol. 88, no. 4, pp. 2016-2023, Aug. 2000.
13. K. R. Hoffmann, D. Reinking, M. Kammler, and M. H. Hoegen, "Surfactant-grown low-doped germanium layers on silicon with high electron mobilities," Thin Solid Films, vol. 321, no. 1/2, pp. 125-130, May 1998.
14. J. M. Kowalski and J. E. Kowalski, "Microwave annealing for low temperature activation of As in Si," in Proc. 15th IEEE Int. Conf. Adv. Thermal Process. Semicond. RTP, Catania, Italy, 2007, pp. 51-56.
15. K. Thompson, J. H. Booske, R. F. Cooper, Y. B. Gianchandani, D. F. Downey, and E. A. Arevalo, "Effect of microwave radiation on boron activation," in Proc. 14th Int. Conf. Ion Implantation Technol., Taos, NM, 2002, pp. 544-547.
16. P. Kohli, P. Kohli, S. Ganguly, T. Kirichenko, H.-J. Li, S. Banerjee, E. Graetz, and M. Shevelev, "Microwave annealing for ultra-shallow junction formation," J. Electron. Mater., vol. 31, no. 3, pp. 214-219, Mar. 2002.