50 nm silicon-on-insulator N-MOSFET featuring multiple stressors: Silicon-carbon source/drain regions and tensile stress silicon nitride liner

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 66-67

  Ang, Kah Wee ^a   Chui, King Jien ^a   Chin, Hock Chun ^a   Foo, Yong Lim ^c   Du, Anyan ^b   Deng, Wei ^b   Li, Ming Fu ^a   Samudra, Ganesh ^a   Balasubramanian, N ^b   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CURRENTS; GATE DIELECTRICS; SILICON NITRIDE;

CHANNEL ORIENTATION; DRIVE CURRENT;

MOSFET DEVICES;

EID: 41149143232     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. K.-W. Ang et al., IEDM Tech. Dig., pp. 503-506, 2005.
2. S. Ito et al., IEDM Tech. Dig., pp. 247-250, 2000.
3. C. D. Sheraw et al., Symp VLSI Tech., pp. 12-13, 2005.
4. M.-S. Lundstrom, IEEE EDL, vol. 22, pp. 293-295, 2001.