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Journal of Applied Physics

Volumn 106, Issue 11, 2009, Pages

Dopant activation in ion implanted silicon by microwave annealing

(4) Alford, T L a Thompson, D C a Mayer, J W a Theodore, N David b

a ARIZONA STATE UNIVERSITY (United States)

b FREESCALE SEMICONDUCTOR INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TECHNIQUES; BORON ACTIVATION; CROSS-SECTION TRANSMISSION ELECTRON MICROSCOPIES; CRYSTALLINITIES; DOPANT ACTIVATION; ELECTRICAL ACTIVATION; HALL MEASUREMENTS; ION IMPLANT; ION-IMPLANTED DOPANTS; ION-IMPLANTED SILICON; LATTICE DAMAGE; MICROWAVE ANNEALING; MICROWAVE PROCESSING; PHYSICAL AND ELECTRICAL CHARACTERIZATIONS; RECRYSTALLIZATIONS; RUTHERFORD BACKSCATTERING SPECTRA; SELECTIVE AREA ELECTRON DIFFRACTION; SILICON LATTICES; SILICON SAMPLES; SOLID PHASE EPITAXIAL REGROWTH;

ANNEALING; ARSENIC; BORON; BORON COMPOUNDS; DIFFRACTION; DOPING (ADDITIVES); ELECTRIC RESISTANCE; HEATING; HOLOGRAPHIC INTERFEROMETRY; ION BOMBARDMENT; ION IMPLANTATION; MICROWAVE HEATING; MICROWAVES; RECRYSTALLIZATION (METALLURGY); RUTHERFORD BACKSCATTERING SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 72449191767 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3260245 Document Type: Article

Times cited : (65)

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