Electromagnetic fast firing for ultrashallow junction formation

IEEE Transactions on Semiconductor Manufacturing

Volumn 16, Issue 3, 2003, Pages 460-468

  Thompson, Keith ^a   Booske, John H ^a   Cooper, Reid F ^a   Gianchandani, Yogesh B ^b  

^a University of Wisconsin Madison   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Activation; Anneal; Dopant; Junction; Microwave; Radiation; Shallow

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; ELECTRIC HEATING; ELECTRIC RESISTANCE; ELECTROMAGNETIC FIELD EFFECTS; EPITAXIAL GROWTH; RAPID THERMAL ANNEALING; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS;

ELECTROMAGNETIC FAST FIRING; ELECTROMAGNETIC INDUCTION HEATING; SOLID PHASE EPITAXIAL REGROWTH; ULTRASHALLOW JUNCTION FORMATION;

MOS DEVICES;

EID: 0042386770     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2003.815198     Document Type: Article

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