Dopant activation in single-crystalline germanium by low-temperature microwave annealing

IEEE Electron Device Letters

Volumn 32, Issue 2, 2011, Pages 194-196

  Lee, Yao Jen ^a,b   Chuang, Shang Shiun ^c   Hsueh, Fu Kuo ^a,c   Lin, Ho Ming ^a   Wu, Shich Chuang ^a   Wu, Ching Yi ^d   Tseng, Tseung Yuen ^c  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d DA YEH UNIVERSITY   (Taiwan)

Author keywords

Germanium; low temperature; microwave anneal; phosphorus; rapid thermal anneal (RTA)

Indexed keywords

DOPANT ACTIVATION; DOPANT DIFFUSION; FILM ROUGHNESS; GERMANIUM EPITAXY; LOW TEMPERATURES; MAXIMUM TEMPERATURE; MICROWAVE ANNEALING; MICROWAVE POWER; PROCESS TIME; RAPID THERMAL ANNEAL; SI WAFER; SINGLE-CRYSTALLINE; SUSCEPTORS; TEMPERATURE REDUCTION;

ELECTRIC RESISTANCE; GERMANIUM; MICROWAVE HEATING; PHOSPHORUS; RAPID THERMAL PROCESSING; SEMICONDUCTING SILICON COMPOUNDS; SHEET RESISTANCE; SILICON WAFERS;

MICROWAVES;

EID: 79151474810     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2090937     Document Type: Article

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