Improvement in negative bias stress stability of solution-processed amorphous in-Ga-Zn-O thin-film transistors using hydrogen peroxide

ACS Applied Materials and Interfaces

Volumn 6, Issue 5, 2014, Pages 3371-3377

  Kwon, Jeong Moo ^a   Jung, Joohye ^a   Rim, You Seung ^a   Kim, Dong Lim ^a   Kim, Hyun Jae ^a  

^a Yonsei University   (South Korea)

Author keywords

hydrogen peroxide; indium gallium zinc oxide; oxide semiconductor; solution process; thin film transistors

Indexed keywords

DEFECTS; GALLIUM; HYDROGEN PEROXIDE; INDIUM; INDUSTRIAL CHEMICALS; PEROXIDES; SEMICONDUCTING INDIUM; THIN FILM TRANSISTORS; ZINC OXIDE;

AMORPHOUS INDIUMGALLIUM-ZINC OXIDE (A-IGZO) THIN-FILM TRANSISTOR (TFTS); FIELD-EFFECT MOBILITIES; INDIUM-GALLIUM-ZINC OXIDES; OXIDE SEMICONDUCTOR; OXYGEN VACANCY DEFECTS; SOLUTION PROCESS; THIN-FILM TRANSISTOR (TFTS); THRESHOLD VOLTAGE SHIFTS;

ORGANIC CHEMICALS;

EID: 84896361637     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am4054139     Document Type: Article

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