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Volumn 520, Issue 5, 2011, Pages 1432-1436
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Surface states related the bias stability of amorphous In-Ga-Zn-O thin film transistors under different ambient gasses
a
a,b
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Author keywords
Gate bias stress; Indium gallium zinc oxide; Thin film transistors
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Indexed keywords
AMBIENT GAS;
ANNEALING TEMPERATURES;
BIAS STABILITY;
BIAS STRESS;
DEFECT STATE;
ELECTRICAL CHARACTERISTIC;
GAS AMBIENTS;
GATE-BIAS STRESS;
INDIUM GALLIUM ZINC OXIDE;
SURFACE STATE;
AMORPHOUS FILMS;
ANNEALING;
ASSOCIATED GAS;
GALLIUM;
INDIUM;
SURFACE DEFECTS;
THIN FILMS;
ZINC;
ZINC OXIDE;
THIN FILM TRANSISTORS;
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EID: 82755192914
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2011.09.033 Document Type: Conference Paper |
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Times cited : (25)
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References (19)
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