Effect of self-assembled monolayer (SAM) on the oxide semiconductor thin film transistor

IEEE/OSA Journal of Display Technology

Volumn 8, Issue 1, 2012, Pages 35-40

  Cho, Seung Hwan ^a   Lee, Yong Uk ^a   Lee, Jeong Soo ^a   Jo, Kang Moon ^a   Kim, Bo Sung ^b   Kong, Hyang Shik ^b   Kwon, Jang Yeon ^c   Han, Min Koo ^b  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Yonsei University   (South Korea)

Author keywords

Back interface; Oxide semiconductor; Self assembled monolayer (SAM); Solution based passivation

Indexed keywords

INDUCED DAMAGE; OXIDE SEMICONDUCTOR; PASSIVATION LAYER; PASSIVATION PROCESS; PLASMA TREATMENT; PROTECTION LAYERS; SAMS; SELF- ASSEMBLED MONOLAYER (SAM); SUBTHRESHOLD SLOPE;

CHLORINE; DEPOSITION; HYDROPHOBICITY; INTERFACES (MATERIALS); ION BOMBARDMENT; PASSIVATION; PLASMA DEPOSITION; PLASMAS; SELF ASSEMBLED MONOLAYERS; SILICON COMPOUNDS; THIN FILM TRANSISTORS;

TRANSISTORS;

EID: 84855463173     PISSN: 1551319X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JDT.2011.2169936     Document Type: Article

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