Improvement in the bias stability of amorphous InGaZnO TFTs using an Al2O3 passivation layer

Surface and Coatings Technology

Volumn 231, Issue , 2013, Pages 117-121

  Huang, Sheng Yao ^a   Chang, Ting Chang ^a,b   Chen, Min Chen ^a   Chen, Te Chih ^a   Jian, Fu Yen ^c   Chen, Yu Chun ^a   Huang, Hui Chun ^a   Gan, Der Shin ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Bias stress; Indium gallium zinc oxide; Passivation; Thin film transistors

Indexed keywords

AMORPHOUS-INDIUM GALLIUM ZINC OXIDES; BIAS STRESS; DEGRADATION MECHANISM; ELECTRICAL BEHAVIORS; INCIDENT PHOTON ENERGY; INDIUM GALLIUM ZINC OXIDES; INTERFACE BETWEEN INSULATORS; THIN-FILM TRANSISTOR (TFTS);

ALUMINUM; AMORPHOUS SEMICONDUCTORS; DEGRADATION; PASSIVATION; PHOTONS; SEMICONDUCTING INDIUM COMPOUNDS; THIN FILMS;

THIN FILM TRANSISTORS;

EID: 84882904609     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2011.12.047     Document Type: Article

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