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Volumn 14, Issue 3, 2014, Pages 1537-1545

Single nanowire light-emitting diodes using uniaxial and coaxial InGaN/GaN multiple quantum wells synthesized by metalorganic chemical vapor deposition

Author keywords

heterostructure; InGaN GaN; light emitting diodes; multiple quantum wells; nanowires

Indexed keywords

DIODES; ELECTRIC PROPERTIES; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOWIRES; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

EID: 84896332588     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl404794v     Document Type: Article
Times cited : (94)

References (54)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.