Threading defect elimination in GaN nanowires

Journal of Materials Research

Volumn 26, Issue 17, 2011, Pages 2293-2298

  Hersee, Stephen D ^a   Rishinaramangalam, Ashwin K ^a   Fairchild, Michael N ^a   Zhang, Lei ^a   Varangis, Petros ^b  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b Nanocrystal Corporation   (United States)

Author keywords

Dislocations; Nanostructure; Transmission electron microscopy

Indexed keywords

CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DISLOCATION CLIMB; DISLOCATION LINES; ELIMINATION PROCESS; GAN NANOSTRUCTURES; GAN-BASED DEVICES; THREADING DEFECTS; THREADING DISLOCATION;

DISLOCATIONS (CRYSTALS); EDGE DISLOCATIONS; EPITAXIAL GROWTH; NANOSTRUCTURES; NANOWIRES; SURFACE DEFECTS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

EID: 84864414970     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2011.112     Document Type: Article

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