Built-in electric field minimization in (In, Ga)N nanoheterostructures

Nano Letters

Volumn 11, Issue 11, 2011, Pages 4515-4519

  Liang, Zhiwen ^a   Wildeson, Isaac H ^a   Colby, Robert ^a   Ewoldt, David A ^a   Zhang, Tong ^b   Sands, Timothy D ^a   Stach, Eric A ^a   Benes, Bedrich ^b   García, R Edwin ^a  

^a PURDUE UNIVERSITY   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARBITRARY TOPOLOGY; CLADDING LAYER; COMPLEX INTERACTION; ELECTRICAL ENERGY; EPITAXIAL STRAIN; INTERNAL ELECTRIC FIELDS; LED LIGHTING; NANO-HETEROSTRUCTURES; QUANTUM WELL; REMNANT POLARIZATIONS; THREE-DIMENSIONAL COMPUTATIONS; VISIBLE WAVELENGTHS;

GALLIUM; LIGHT EMITTING DIODES; NANORODS;

ELECTRIC FIELDS;

GALLIUM; GALLIUM NITRIDE; INDIUM; INDIUM NITRIDE; NANOMATERIAL;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; CONFORMATION; ELECTROMAGNETIC FIELD; MACROMOLECULE; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

COMPUTER SIMULATION; ELECTROMAGNETIC FIELDS; GALLIUM; INDIUM; MACROMOLECULAR SUBSTANCES; MODELS, CHEMICAL; MOLECULAR CONFORMATION; NANOSTRUCTURES; PARTICLE SIZE; SURFACE PROPERTIES;

EID: 80755159206     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl1044605     Document Type: Article

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