Highly uniform characteristics of GaN nanorods grown on Si(111) by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics

Volumn 49, Issue 9 PART 1, 2010, Pages

  Ra, Yong Ho ^a   Navamathavan, Rangaswamy ^a   Park, Ji Hyeon ^a   Song, Ki Young ^a   Lee, Young Min ^a   Kim, Dong Wook ^a   Jun, Baek Byung ^a   Lee, Cheul Ro ^a  

^a Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY CLUSTER; CATHODOLUMINESCENCE (CL); ENERGY DISPERSIVE X-RAY; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; GAN NANORODS; GOLD-COATED; HIGH QUALITY; METALORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN ATOM; SELECTED AREA ELECTRON DIFFRACTION; SI (1 1 1); SI(111) SUBSTRATE; SINGLE-CRYSTAL WURTZITE; TEM IMAGES; UNIFORM DIAMETER; VAPOR-LIQUID-SOLID MECHANISM;

CRYSTAL STRUCTURE; ENAMELS; GALLIUM NITRIDE; GOLD COATINGS; GOLD DEPOSITS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANORODS; SCANNING ELECTRON MICROSCOPY; SILICON ALLOYS; ZINC SULFIDE;

GALLIUM ALLOYS;

EID: 78049406748     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.091003     Document Type: Article

References (27)

1. S. V. N. T. Kuchibhatla, A. S. Karakoti, D. Bera, and S. Seal: Prog. Mater. Sci. 52 (2007) 699.
2. N. Wang, Y. Cai, and R. Q. Zhang: Mater. Sci. Eng. R 60 (2008) 1.
3. H. M. Kim, Y. H. Cho, H. Lee, S. I. Kim, S. R. Ryu, G. Y. Kim, T. W. Kang, and K. S. Chung: Nano Lett. 4 (2004) 1059.
4. R. Calarco, R. J. Meijers, R. K. Debnath, T. Stoica, E. Sutter, and H. Luth: Nano Lett. 7 (2007) 2248.
5. S. Gradecak, F. Qian, Y. Li, H. G. Park, and C. M. Lieber: Appl. Phys. Lett. 87 (2005) 173111.
6. A. B. Greytak, L. J. Lauhon, M. S. Gudiksen, and C. M. Lieber: Appl. Phys. Lett. 84 (2004) 4176.
7. E. I. Givargizov: Highly Anisotropic Crystals (Springer, New York, 1987).
8. H. Adhikari, A. F. Marshall, C. E. D. Chidsey, and P. C. McIntyre: Nano Lett. 6 (2006) 318.
9. Y. Whang, L. Zhang, C. Liang, G. Wang, and X. Peng: Chem. Phys. Lett. 357 (2002) 314.
10. C. C. Chen, C. C. Yeh, C. H. Chen, M. Y. Yu, H. L. Liu, J. J. Wu, K. H. Chen, L. C. Chen, J. Y. Peng, and Y. F. Chen: J. Am. Chem. Soc. 123 (2001) 2791.
11. T. Wang, F. Ranalli, P. J. Parbrook, R. Airey, J. Bai, R. Rattlidge, and G. Hill: Appl. Phys. Lett. 86 (2005) 103103.
12. Y. D. Wang, S. J. Chua, S. Tripathy, M. S. Sander, P. Chen, and C. G. Fonstad: Appl. Phys. Lett. 86 (2005) 071917.
13. X. He, G. Meng, X. Zhu, and M. Kong: Nano Res. 2 (2009) 321.
14. Y. Dong, B. Tian, T. J. Kempa, and C. M. Lieber: Nano Lett. 9 (2009) 2183.
15. R. A. Burke, D. R. Lamborn, X. Weng, and J. M. Redwing: J. Cryst. Growth 311 (2009) 3409.
16. X. Liu, C. Li, S. Han, J. Han, and C. Zhou: Appl. Phys. Lett. 82 (2003) 1950.
17. H. Y. Kim, J. Park, and H. Yang: Chem. Phys. Lett. 372 (2003) 269.
18. R. Ma and Y. Bando: Chem. Mater. 14 (2002) 4403.
19. L. Cademartiri and G. A. Ozin: Adv. Mater. 21 (2009) 1013.
20. B. A. Wacaser, K. A. Dick, J. Johansson, M. T. Borgström, K. Deppert, and L. Samuelson: Adv. Mater. 21 (2009) 153.
21. B. D. Liu, Y. Bando, C. C. Tang, F. F. Xu, and D. Goldberg: Appl. Phys. Lett. 87 (2005) 073106.
22. E. Su. Jang, Y. H. Ra, Y. M. Lee, S. H. Yun, D. W. Kim, R. Navamathavan, J. S. Kim, I. H. Lee, and C. R. Lee: Jpn. J. Appl. Phys. 48 (2009) 091001.
23. Y. H. Ra, R. Navamathavan, Y. M. Lee, D. W. Kim, J. S. Kim, I. H. Lee, and C. R. Lee: J. Cryst. Growth 312 (2010) 770.
24. Z. J. Li, X. L. Chen, H. J. Li, and Y. P. Xu: J. Cryst. Growth 236 (2002) 71.
25. T. Kuykendall, P. Pauzauskie, S. Lee, Y. Zhang, J. Goldberger, and P. Yang: Nano Lett. 3 (2003) 1063.
26. F. Qian, Y. Li, S. Gradecak, D. Wang, C. J. Barrelet, and C. M. Lieber: Nano Lett. 4 (2004) 1975.
27. W. Q. Han and A. Zettl: Appl. Phys. Lett. 80 (2002) 303.