Carrier lifetimes in green emitting InGaN/GaN disks-in-nanowire and characteristics of green light emitting diodes

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 10, Issue 5, 2013, Pages 812-815

  Jahangir, Shafat ^a   Banerjee, Animesh ^a   Bhattacharya, Pallab ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Carrier lifetime; Disks in nanowire; Quantum efficiency; Surface passivation

Indexed keywords

DISKS-IN-NANOWIRE; EFFICIENCY DROOPS; EXTERNAL QUANTUM EFFICIENCY; GREEN LIGHT EMITTING DIODES; INTERNAL QUANTUM EFFICIENCY; RADIATIVE LIFETIME; ROOM TEMPERATURE; SURFACE PASSIVATION;

CARRIER LIFETIME; LIGHT EMITTING DIODES; PASSIVATION; QUANTUM EFFICIENCY;

NANOWIRES;

EID: 84878201176     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201200583     Document Type: Article

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