Field-emission properties of individual GaN nanowires grown by chemical vapor deposition

Journal of Applied Physics

Volumn 111, Issue 4, 2012, Pages

  Choi, Yongho ^a,c   Michan, Mario ^a   Johnson, Jason L ^b   Naieni, Ali Kashefian ^a   Ural, Ant ^b   Nojeh, Alireza ^a  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

^b University of Florida   (United States)

^c Jungwon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED ELECTRIC FIELD; CONTACT PRINTING; FIELD-EMISSION BEHAVIOR; FIELD-EMISSION PROPERTIES; FOWLER-NORDHEIM; GAN NANOWIRES; METAL ELECTRODES; SINGLE-CRYSTALLINE; TURN-ON ELECTRIC FIELD;

CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELDS; GALLIUM NITRIDE; VAPORS;

NANOWIRES;

EID: 84863286953     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3685903     Document Type: Article

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