Applications and synthesis of zinc oxide: An emerging wide bandgap material

2013 High Capacity Optical Networks and Emerging/Enabling Technologies, HONET-CNS 2013

Volumn , Issue , 2013, Pages 88-93

  Hussain, Babar ^a   Akhtar Raja, M Yasin ^a   Lu, Na ^a   Ferguson, Ian ^a  

^a University of North Carolina at Charlotte   (United States)

Author keywords

HEMT; MOCVD TFT; nanostructures; TCO; UV emitters; Zinc oxide

Indexed keywords

BINDING ENERGY; DISPLAY DEVICES; ENERGY GAP; FILM GROWTH; HIGH ELECTRON MOBILITY TRANSISTORS; NANOSTRUCTURES; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS; THIN FILM TRANSISTORS;

EXCITON-BINDING ENERGY; II - VI SEMICONDUCTOR MATERIALS; OPTOELECTRONICS TECHNOLOGIES; PIEZOELECTRIC CONSTANT; TCO; THERMOELECTRIC DEVICES; UV-EMITTER; WIDE BAND-GAP MATERIAL;

ZINC OXIDE;

EID: 84894482864     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/HONET.2013.6729763     Document Type: Conference Paper

References (38)

1. Z. L. Wang, "Zinc oxide nanostructures: growth, properties and applications," J. Phys.: Condens. Matter, vol. 16, pp. 829-858, 2004.
2. E. M. C. Fortunato et al., "High mobility indium free amorphous oxide thin film transistors", Appl. Phys. Lett., vol. 92, pp. 222103-1-3, 2008.
3. E. Fortunato, P. Barquinha, and R. Martins, "Oxide semiconductor thin-film transistors: a review of recent advances," Adv. Mater., vol. 24, pp. 2945-2986, 2012.
4. A. Tsukazaki et al., "High electron mobility exceeding 104 cm2V-1s-1 in MgxZn1-xO/ZnO single heterostructures grown by molecular beam epitaxy," Appl. Phys. Express, vol. 1, pp. 055004-1-3, 2008.
5. H. Tampo et al., "Polarization-induced two-dimensional electron gases in ZnMgO/ZnO heterostructures," Appl. Phys. Lett., vol. 93, pp. 202104-1-3, 2008.
6. K. Remashan, Y. S. Choi, S. J. Park, and J. H. Jang, "High performance MOCVD-grown ZnO thin-film transistor with a thin MgZnO layer at channel/gate insulator interface," J. Electrochem. Soc., vol. 157, pp. H1121-H1126, 2010.
7. J. Jie, W. Zhang, I. Bello, C. S. Lee, and S. T. Lee, "Onedimensional II-VI nanostructures: synthesis, properties and optoelectronic applications," Nano Today, vol. 5, pp. 313-336, 2010.
8. X. Fang et al., "ZnS nanostructures: from synthesis to applications," Prog. Mater. Sci., vol. 56, pp. 175-287, 2011.
9. X. Fang, L. Wu, and L. Hu, "ZnS Nanostructure Arrays: A Developing Material Star," Adv. Mater., vol. 23, pp. 585-598, 2011.
10. N. Li et al., "Suppression of phase separation in InGaN layers grown on lattice-matched ZnO substrates," J. Crystal Growth, vol. 311, pp. 4628-4631, 2009.
11. N. Li et al., "Effect of an Al2O3 transition layer on InGaN on ZnO substrates by organometallic vapor-phase epitaxy," J. Crystal Growth, vol. 310, pp. 4908-4912, 2008.
12. H. Yu et al., "MOVPE growth of AlGaN/GaN superlattices on ZnO substrates for green emitter applications," J. Crystal Growth, vol. 310, pp. 4904-4907, 2008.
13. P. K. Nayak et al., "Spin-coated Ga-doped ZnO transparent conducting thin films for organic light-emitting diodes," J. Phys. D: Appl. Phys., vol. 42, pp. 035102-1-6, 2009.
14. Y. C. Huang et al., "Characterizations of gallium-doped ZnO films on glass substrate prepared by atmospheric pressure metalorganic chemical vapor deposition," Thin Solid Films, vol. 517, pp. 5537-5542, 2009.
15. J. Zhao, X. W. Sun, and S. T. Tan, "Bandgap-engineered Garich GaZnO thin films for UV transparent electronics," IEEE Trans. Electron Devices, vol. 56, pp. 2995-2999, December 2009.
16. J. D. Ye et al., "Gallium doping dependence of single-crystal ntype ZnO grown by metal organic chemical vapor deposition," J. Crystal Growth, vol. 283, pp. 279-285, 2005.
17. B. Hahn, G. Heindel, E. P. Schoberer, and W. Gebhardt, "MOCVD layer growth of ZnO using DMZn and tertiary butanol," Semicond. Sci. Technol., vol. 13, pp. 788-791, 1998.
18. G. A. Hirata et al., "Synthesis and optoelectronic characterization of gallium doped zinc oxide transparent electrodes," Thin Solid Films, vol. 288, pp. 29-31, 1996.
19. V. Assuncao et al., "Influence of the deposition pressure on the properties of transparent and conductive ZnO:Ga thin-film produced by r.f. sputtering at room temperature," Thin Solid Films, vol. 427, pp. 401-405, 2003.
20. X. Yu et al., "Preparation and properties of ZnO:Ga films prepared by r.f. magnetron sputtering at low temperature," Appl. Surf. Sci., vol. 239. Pp. 222-226, 2005.
21. Z. F. Liu, F. K. Shan, Y. X. Li, B. C. Shin, and Y. S. Yu, "Epitaxial growth and properties of Ga-doped ZnO films grown by pulsed laser deposition," J. Crystal Growth, vol. 259, pp. 130-136, 2003.
22. S. J. Henley, M. N. R. Ashfold, and D. Cherns, "The growth of transparent conducting ZnO films by pulsed laser ablation," Surf. Coat. Tech., vols. 177-178, pp. 271-276, 2004.
23. T. Yamada, H. Makino, N. Yamamoto, and T. Yamamoto, "Ingrain and grain boundary scattering effects on electron mobility of transparent conducting polycrystalline Ga-doped ZnO films," J. Appl. Phys., vol. 107, pp. 123534-1-8, 2010.
24. R. Vinodkumar et al., "Structural, spectroscopic and electrical studies of nanostructured porous ZnO thin films prepared by pulsed laser deposition," Spectrochim. Acta Mol. Biomol. Spectros., vol. 118, pp. 724-732, 2013.
25. J. Wang et al., "Growth parameters and substrate treatment for the MOCVD growth of ZnO," Phys. Status Solidi A, vol. 202, pp. 1967-1972, 2005.
26. S. Nicolay, S. Fay, and C. Ballif, "Growth model of MOCVD polycrystalline ZnO," Cryst. Growth Des., vol. 9, pp. 4957-4962, 2009.
27. K. T. Roro, J. K. Dangbegnon, S. Sivaraya, A. W. R. Leitch, and J. R. Botha, "Influence of metal organic chemical vapor deposition growth parameters on the luminescent properties of ZnO thin films deposited on glass substrates," J. Appl. Phys. Vol. 103, pp. 053516-1-8, 2008.
28. Y. S. Choi et al., "Effect of VI/II gas ratio on the epitaxial growth of ZnO films by metalorganic chemical vapor deposition," Jpn. J. Appl. Phys., vol. 50, pp. 105502-1-4, 2011.
29. B. H. Kong, D. C. Kim, S. K. Mohanta, and H. K. Cho, "Influence of VI/II ratios on the growth of ZnO thin films on sapphire substrates by low temperature MOCVD," Thin Solid Films, vol. 518, pp. 2975-2979, 2010.
30. O. Pagni and A. W. R. Leitch, "Influence of VI:II ratio on the properties of MOCVD-grown ZnO thin films," Phys. Status Solidi A, vol. 201, pp. 2213-2218, 2004.
31. C. C. Wu, D. S. Wuu, P. R. Lin, T. N. Chen, and R. H. Horng, "Effects of growth conditions on structural properties of ZnO nanostructures on sapphire substrate by metal-organic chemical vapor deposition," Nanoscale Res. Lett., vol. 4, pp. 377-384, 2009.
32. S. W. Kim, S. Fujita, M. S. Yi, and D. H. Yoon, "Catalyst-free synthesis of ZnO nanowall networks on Si3N4/Si substrates by metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 88, pp. 253114-1-3, 2006.
33. M. Pan et al., "Metal-organic chemical vapor deposition of ZnO," J. Crystal Growth, vol. 287, pp. 688-693, 2006.
34. M. H. Kane et al., "Magnetic properties of bulk ZnMnxO and ZnCoxO single crystals," J. Appl. Phys., vol. 97, pp. 023906-1-6, 2005.
35. M. Pan et al., "Epitaxial growth and characterization of p-type ZnO," J. Electron. Mater., vol. 36, pp. 457-461, 2007.
36. S. Gupta et al., "MOVPE growth of transition-metal-doped GaN and ZnO for spintronic applications," J. Crystal Growth, vol. 310, pp. 5032-5038, 2008.
37. J. Nause et al., "ZnO semiconductors for lighting," Proc. Of SPIE, vol. 5941, pp. 59410D-1-8, 2005.
38. T. Zaidi, A. Melton, W. E. Fenwick, and I. Ferguson, "n-type, ptype and semi-insulating ZnO:N thin film growth by metal organic chemical vapor deposition with NH3 doping," J. Vac. Sci. Technol. B, vol. 27, pp. 1904-1908, 2009.