Growth parameters and substrate treatment for the MOCVD growth of ZnO

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 10, 2005, Pages 1967-1972

  Wang, Jinzhong ^a   Sallet, Vincent ^a   Amiri, Gaëlle ^a   Rommeluère, Jean François ^a   Lusson, Alain ^a   Rzepka, E ^a   Lewis, John E ^b   Galtier, Pierre ^a   Gorochov, Ouri ^a  

^a CNRS   (France)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL QUALITY; FULL WIDTH AT HALF MAXIMUM (FWHM); GROWTH TEMPERATURE; PHOTOLUMINESCENCE (PL) SPECTRA;

METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; MORPHOLOGY; PARTIAL PRESSURE; PHOTOLUMINESCENCE; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

FILM GROWTH;

EID: 25444493415     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200420068     Document Type: Article

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