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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 4, 2009, Pages 1904-1908

N -type, p -type and semi-insulating ZnO:N thin film growth by metal organic chemical vapor deposition with N H3 doping

(4) Zaidi, Tahir a Melton, Andrew a Fenwick, William E a Ferguson, Ian a,b

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

b Georgia Institute of Technology (United States)

Author keywords

[No Author keywords available]

Indexed keywords

C-PLANE SAPPHIRE; CARRIER GAS; DIETHYL ZINC; ELECTRICAL PROPERTY; HALL EFFECT MEASUREMENT; METALORGANIC CHEMICAL VAPOR DEPOSITION; N INCORPORATION; P-TYPE; RAMAN DATA; SEMI-INSULATING; XRD; ZNO;

BIOACTIVITY; CARRIER CONCENTRATION; CORUNDUM; DEPOSITION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; GYRATORS; HALL EFFECT; INDUSTRIAL CHEMICALS; MAGNETIC FIELD EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL MICROSCOPY; OPTICAL PROPERTIES; ORGANIC CHEMICALS; ORGANOMETALLICS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; THIN FILMS; VAPORS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC OXIDE;

FILM GROWTH;

EID: 68349128860 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3151829 Document Type: Article

Times cited : (9)

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