Bandgap-engineered Ga-Rich GaZnO thin films for UV transparent electronics

IEEE Transactions on Electron Devices

Volumn 56, Issue 12, 2009, Pages 2995-2999

  Zhao, Junliang ^a   Sun, Xiao Wei ^a   Tan, Swee Tiam ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Bandgap engineering; GaZnO; UV transparent electronics

Indexed keywords

BAND GAP ENGINEERING; CHANNEL LAYERS; DEEP UV; FIELD-EFFECT; FIELD-EFFECT MOBILITIES; GA CONTENT; GAZNO; HIGH TRANSPARENCY; N-CHANNEL; ON/OFF RATIO; SEMI-INSULATING; SUBTHRESHOLD SWING; TRANSPARENT CONDUCTORS; TRANSPARENT ELECTRONICS; TRANSPARENT THIN FILM TRANSISTOR;

ENERGY GAP; GALLIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; THIN FILM TRANSISTORS; THIN FILMS;

GALLIUM ALLOYS;

EID: 79251574735     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2033010     Document Type: Article

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