Characterizations of gallium-doped ZnO films on glass substrate prepared by atmospheric pressure metal-organic chemical vapor deposition

Thin Solid Films

Volumn 517, Issue 18, 2009, Pages 5537-5542

  Huang, Yen Chin ^a   Li, Zhen Yu ^b   Chen, Hung hsin ^a   Uen, Wu Yih ^a   Lan, Shan Ming ^a   Liao, Sen Mao ^a   Huang, Yu Hsiang ^c   Ku, Chien Te ^c   Chen, Meng Chu ^c   Yang, Tsun Neng ^c   Chiang, Chin Chen ^c  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

Author keywords

Chemical vapor deposition (CVD); Electrical properties and measurements; Gallium; Optical properties; Scanning electron microscopy; Water; X ray diffraction; Zinc oxide

Indexed keywords

ABSORPTION EDGES; BAND GAP ENERGY; BLUE SHIFT; BURSTEIN-MOSS SHIFT; DIETHYLZINC; DOPED ZNO; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL PROPERTIES AND MEASUREMENTS; FORMING MICROSTRUCTURE; GA FILM; GA-DOPED; GLASS SUBSTRATES; HALL MEASUREMENTS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; N-TYPE DOPANTS; REACTANT GAS; SCANNING ELECTRON MICROSCOPY IMAGE; SMOOTH SURFACE; TRIETHYL GALLIUMS; WAVELENGTH RANGES; ZNO; ZNO FILMS;

ATMOSPHERIC CHEMISTRY; ATMOSPHERIC PRESSURE; DIFFRACTION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRON MICROSCOPES; FLOW RATE; GALLIUM; GAS ABSORPTION; GLASS; HOLOGRAPHIC INTERFEROMETRY; INDUSTRIAL CHEMICALS; INTEGRATED OPTOELECTRONICS; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL MICROSCOPY; OPTICAL PROPERTIES; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); OXIDE FILMS; SCANNING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; THERMOELECTRIC EQUIPMENT; VAPOR DEPOSITION; WATER VAPOR; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 65649103764     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.03.194     Document Type: Article

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