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Volumn 107, Issue 12, 2010, Pages

Ingrain and grain boundary scattering effects on electron mobility of transparent conducting polycrystalline Ga-doped ZnO films

(4) Yamada, Takahiro a Makino, Hisao a Yamamoto, Naoki a Yamamoto, Tetsuya a

a KOCHI UNIVERSITY OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARC DISCHARGE; DIRECT CURRENT; DRUDE MODELS; ELECTRON EFFECTIVE MASS; FREE ELECTRON; GA-DOPED ZNO; GLASS SUBSTRATES; GRAIN BOUNDARY SCATTERING; HALL MEASUREMENTS; ION PLATING; OPTICAL RESPONSE; PHOTON ENERGY RANGE; POLYCRYSTALLINE; POLYCRYSTALLINE GRAINS; SCATTERING MECHANISMS; SUBSTRATE TEMPERATURE; TAUC-LORENTZ MODELS; THICKNESS DEPENDENCE;

CONDUCTIVE FILMS; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; ELECTRON MOBILITY; ELECTRONS; GALLIUM ALLOYS; GALVANOMAGNETIC EFFECTS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HALL MOBILITY; OPTICAL PROPERTIES; SCATTERING; SPECTROSCOPIC ELLIPSOMETRY; SUBSTRATES; ZINC OXIDE;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 77954178514 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3447981 Document Type: Article

Times cited : (126)

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