ZnO semiconductors for lighting

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5941, Issue , 2005, Pages 1-8

  Nause, Jeff ^a   Pan, Ming ^a   Rengarajan, Varatharajan ^a   Nemeth, William ^a   Ganesan, Shanthi ^a   Payne, Adam ^b   Li, Nola ^b   Ferguson, Ian ^b  

^a Cermet Inc   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Bulk ZnO; LED; MOCVD; N type ZnO; Ohmic contact; P type ZnO; Tunable bandgap

Indexed keywords

ABSORPTION; CARRIER CONCENTRATION; EPITAXIAL GROWTH; LIGHTING; SECONDARY ION MASS SPECTROMETRY; ZINC OXIDE;

N-TYPE ZNO; P-TYPE ZNO; TUNABLE BANDGAP;

SEMICONDUCTOR DEVICES;

EID: 31844444155     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.624534     Document Type: Conference Paper

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