MOCVD layer growth of ZnO using DMZn and tertiary butanol

Semiconductor Science and Technology

Volumn 13, Issue 7, 1998, Pages 788-791

  Hahn, B ^a   Heindel, G ^a   Pschorr Schoberer, E ^a   Gebhardt, W ^a  

^a UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC CONDUCTIVITY MEASUREMENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC COMPOUNDS; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SPECTROSCOPY; X RAY DIFFRACTION; ZINC OXIDE;

DIMETHYLZINC; DIMETHYLZINC TRIETHYLAMINE; TERTIARY BUTANOL;

FILM GROWTH;

EID: 0032115889     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/7/022     Document Type: Article

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