Suppression of phase separation in InGaN layers grown on lattice-matched ZnO substrates

Journal of Crystal Growth

Volumn 311, Issue 22, 2009, Pages 4628-4631

  Li, Nola ^a   Wang, Shen Jie ^a   Park, Eun Hyun ^a   Feng, Zhe Chuan ^b   Tsai, Hung Lin ^b   Yang, Jer Ren ^b   Ferguson, Ian ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

A1. High resolution X ray diffraction; A1. Phase separation; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B1. Sapphire; B1. ZnO

Indexed keywords

A1. HIGH-RESOLUTION X-RAY DIFFRACTION; A1. PHASE SEPARATION; A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; B1. NITRIDES; B1. SAPPHIRE; B1. ZNO;

CORUNDUM; DIFFRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INDIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHASE INTERFACES; PHASE MODULATION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; SILICON CARBIDE; SINGLE CRYSTALS; SUBSTRATES; SULFUR COMPOUNDS; VAPORS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

PHASE SEPARATION;

EID: 70350089225     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.09.004     Document Type: Article

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