Gallium doping dependence of single-crystal n-type Zno grown by metal organic chemical vapor deposition

Journal of Crystal Growth

Volumn 283, Issue 3-4, 2005, Pages 279-285

  Ye, J D ^a   Gu, S L ^a   Zhu, S M ^a   Liu, S M ^a   Zheng, Y D ^a   Zhang, R ^a   Shi, Y ^a   Yu, H Q ^a   Ye, Y D ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

A3. Metal organic chemical vapor deposition; B1. Gallium doping; B1. ZnO

Indexed keywords

ABSORPTION; CONCENTRATION (PROCESS); DOPING (ADDITIVES); EPITAXIAL GROWTH; GALLIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SAPPHIRE; SINGLE CRYSTALS; SUBSTRATES; THIN FILMS;

BANDGAP RENORMALIZATION (BGR) EFFECTS; GALLIUM DOPING; NONRADIATIVE RECOMBINATION RATES; ZNO;

ZINC OXIDE;

EID: 24644505845     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.06.030     Document Type: Article

References (37)

1. A. Tsukazaki, A. Ohtomo, and T. Onuma Nat. Mater. 4 2005 42
2. D.C. Look Mater. Sci. Eng. B 80 2001 383
3. D.C. Look, and B. Claflin Phys. Status Solidi B 241 2004 624
4. S.J. Pearton, D.P. Norton, and K. Ip Prog. Mater. Sci. 50 2005 293
5. S.J. Pearton, Y.W. Heo, and M. Ivill Semicond. Sci. Technol. 19 2004 R59
6. J. Hu, and R.G. Gordon J. Appl. Phys. 72 1992 5381
7. A.E. Delahoy, and M. Cherny Mater. Res. Soc. Symp. Proc. 426 1996 467
8. W.J. Jeong, and G.C. Park Sol. Energy Mater. Sol. Cell 65 2001 37
9. H. Kato, M. Sano, and K. Miyamoto J. Crystal Growth 237-239 2002 538
10. H.J. Ko, Y.F. Chen, and S.K. Hong Appl. Phys. Lett. 77 2000 3761
11. K.T.R. Reddy, H. Gopalaswamy, and P.J. Reddy J. Crystal Growth 210 2000 516
12. Y. Li, G.S. Tompa, and S. Liang J. Vac. Sci. Technol. A 15 1997 1063
13. G.A. Hirata, J. Mckittrick, and J. Siqueiros J. Vac. Sci. Technol. A 14 1996 791
14. K.Y. Cheong, N. Muti, and S.R. Ramanan Thin Solid Films 410 2000 142
15. J. Zhong, S. Muthukumar, and Y. Chen Appl. Phys. Lett. 83 2003 3401
16. K. Ohkawa, T. Mitsuyu, and O. Yamazaki J. Appl. Phys. 62 1987 3216
17. C.E. Stutz, M. Mack, and M.D. Bremser J. Electron. Mater. 27 1998 L26
18. C. Sartel, V. Souliere, and M. Zielinski Mater. Sci. Forum 483 2005 121
19. A. dadgar, N. Oleynik, and J. Blasing J. Crystal Growth 272 2004 800
20. X. Tang, A. Clauzonnier, and H.I. Campbell Appl. Phys. Lett. 84 2004 3043
21. P. Blood Semicond. Sci. Technol. 1 1996 7
22. M. Miyazaki, K. Sato, and A. Mitsui J. Non-Cryst. Solids 218 1997 323
23. P. Kozodoy, S. Keller, and S.P. DenBaars J. Crystal Growth 195 1998 265
24. T. Hino, T. Haga, and Y. Abe Appl. Phys. Lett. 82 1997 1196
25. N. Roberts, R.P. Wang, and A.W. Sleight Phys. Rev. B 57 1998 5734
26. A.R. Goni, A. Cantarero, and K. Syassen Phys. Rev. B 41 1990 10111
27. E. Burstein Phys. Rev. 93 1954 632
28. T.S. Moss Proc. Phys. Soc. London Sect. B 55 1954 775
29. M. Munoz, F.H. Pollak, and M. Kahn Phys. Rev. B 63 2001 233302
30. J.D. Ye, S.L. Gu, and S.M. Zhu Appl. Phys. Lett. 86 2005 192111
31. K.B. Nam, M.L. Nakarmi, and J. Li Appl. Phys. Lett. 83 2003 2787
32. E. Lliopoulos, D. Doppalapudi, and H.M. Ng Appl. Phys. Lett. 73 1998 375
33. S.M. Ryvkin Phys. Status Solidi 11 1965 285
34. E.F. Schubert, I.D. Goepfert, and W. Grieshaber Appl. Phys. Lett. 71 1997 921
35. T. Makino, Y. Segawa, and S. Yoshida Appl. Phys. Lett. 85 2004 759
36. I. Lee, J.J. Lee, and P. Kung Appl. Phys. Lett. 74 1999 102
37. D.C. Reynolds, D.C. Look, and B. Hogai J. Appl. Phys. 88 2000 5760