Growth characteristics and properties of Ga-doped ZnO (GZO) thin films grown by thermal and plasma-enhanced atomic layer deposition

Applied Surface Science

Volumn 295, Issue , 2014, Pages 260-265

  Nam, Taewook ^a   Lee, Chang Wan ^a,b   Kim, Hyun Jae ^a   Kim, Hyungjun ^a  

^a Yonsei University   (South Korea)

^b Korea Research Institute of Chemical Technology   (South Korea)

Author keywords

Atomic layer deposition; Ga doped ZnO; Growth characteristics; TCO

Indexed keywords

ATOMS; CARRIER CONCENTRATION; CHEMICAL ANALYSIS; GROWTH TEMPERATURE; HALL MOBILITY; II-VI SEMICONDUCTORS; OPTICAL PROPERTIES; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

ELECTRICAL AND OPTICAL PROPERTIES; GA-DOPED ZNO; GADOPED ZNO (GZO); GROWTH CHARACTERISTIC; HALL MEASUREMENTS; HIGH GROWTH TEMPERATURES; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; ROOM TEMPERATURE DEPOSITION;

ATOMIC LAYER DEPOSITION;

EID: 84894088406     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2014.01.027     Document Type: Article

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