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Volumn 310, Issue 20, 2008, Pages 4477-4480
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Synthesis and analysis of resistance-controlled Ga-doped ZnO nanowires
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Author keywords
A1. Doping; A1. Nanomaterials; A2. Physical vapor deposition processes
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Indexed keywords
CONCENTRATION (PROCESS);
ELECTRIC WIRE;
NANOSTRUCTURED MATERIALS;
NANOSTRUCTURES;
NANOWIRES;
NONMETALS;
OPTICAL PROPERTIES;
OXYGEN;
OXYGEN VACANCIES;
PULSED LASER APPLICATIONS;
PULSED LASER DEPOSITION;
SEMICONDUCTING ZINC COMPOUNDS;
STRUCTURE (COMPOSITION);
ZINC ALLOYS;
ZINC OXIDE;
A1. DOPING;
A1. NANOMATERIALS;
A2. PHYSICAL VAPOR DEPOSITION PROCESSES;
CHEMICAL STRUCTURES;
DOPING CONCENTRATIONS;
GA-DOPED ZNO;
OPTICAL-;
GALLIUM;
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EID: 52149094973
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.07.049 Document Type: Article |
Times cited : (27)
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References (18)
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