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Volumn 517, Issue 16, 2009, Pages 4644-4649
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Deposition of Al-doped ZnO thin-films with radio frequency magnetron sputtering for a source/drain electrode for pentacene thin-film transistor
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Author keywords
Al doped zinc oxide; Atomic force microscopy; Crystallity; Pentacene; Resistivity; Thin film transistor; Ultraviolet photoelectron spectroscopy; X ray diffraction
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Indexed keywords
AL-DOPED ZINC OXIDE;
AL-DOPED ZNO;
CRYSTALLINITY;
CRYSTALLITY;
DEPOSITION TEMPERATURES;
DEVICE PERFORMANCE;
ELECTRICAL RESISTIVITIES;
HIGH CRYSTALLINITY;
INDIUM TIN OXIDE ELECTRODES;
LOW RESISTIVITIES;
ON/OFF RATIOS;
PENTACENE;
PENTACENE THIN-FILM TRANSISTORS;
RADIO FREQUENCY MAGNETRON SPUTTERING;
RADIO-FREQUENCY SPUTTERING;
RESISTIVITY;
ROOM TEMPERATURES;
SOURCE/DRAIN ELECTRODES;
SPUTTERING POWER;
ALUMINUM;
ATOMIC FORCE MICROSCOPY;
ATOMIC SPECTROSCOPY;
ATOMS;
DIFFRACTION;
ELECTRIC RESISTANCE;
ELECTRON SPECTROSCOPY;
MAGNETRONS;
METALLIC FILMS;
PHOTOELECTRICITY;
PHOTOIONIZATION;
PHOTONS;
POLYCRYSTALLINE MATERIALS;
RADIO;
RADIO WAVES;
SEMICONDUCTING ORGANIC COMPOUNDS;
SEMICONDUCTING ZINC COMPOUNDS;
SPECTRUM ANALYSIS;
SURFACE ROUGHNESS;
THIN FILM TRANSISTORS;
THIN FILMS;
TIN;
TITANIUM COMPOUNDS;
ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY;
X RAY DIFFRACTION;
ZINC;
ZINC OXIDE;
X RAY PHOTOELECTRON SPECTROSCOPY;
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EID: 65149091515
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2009.01.146 Document Type: Article |
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Times cited : (43)
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References (16)
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