Structural, electrical, and optical properties of atomic layer deposition Al-doped ZnO films

Journal of Applied Physics

Volumn 108, Issue 4, 2010, Pages

  Banerjee, Parag ^a   Lee, Won Jae ^a,b   Bae, Ki Ryeol ^b   Lee, Sang Bok ^c,d   Rubloff, Gary W ^a,e  

^a UNIVERSITY OF MARYLAND   (United States)

^b Dong Eui University   (South Korea)

^c Bldg 142   (United States)

^d Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^e The Institute for Research in Electronics and Applied Physics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPED ZNO; AL-DOPING; ATOMIC PERCENT; AZO FILMS; BAND GAPS; BURSTEIN-MOSS EFFECTS; FILM RESISTIVITY; HALL MEASUREMENTS; OPTICAL TRANSMITTANCE; QUARTZ SUBSTRATE; VISIBLE REGION; X-RAY DIFFRACTION DATA; ZNO FILMS;

AMORPHOUS FILMS; ATOMIC FORCE MICROSCOPY; ATOMIC LAYER DEPOSITION; ATOMS; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ENERGY GAP; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; METALLIC FILMS; OPTICAL FILMS; OPTICAL PROPERTIES; QUARTZ; SURFACE ROUGHNESS; X RAY DIFFRACTION; ZINC OXIDE;

ALUMINUM;

EID: 77956336658     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3466987     Document Type: Conference Paper

References (31)

1. Zinc Oxide Bulk, Thin Films and Nanostructures, edited by, C. Jagadish, and, S. Pearton, (Elsevier, Oxford, UK, 2006).
2. J. N. Duenow, T. A. Gessert, D. M. Wood, T. M. Barnes, M. Young, B. To, and T. J. Coutts, J. Vac. Sci. Technol. A JVTAD6 0734-2101 25, 955 (2007). 10.1116/1.2735951
3. T. Minami, H. Nanto, and S. Takata, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 23, L280 (1984). 10.1143/JJAP.23.L280
4. F. K. Shan, G. X. Liu, W. J. Lee, and B. C. Shin, J. Appl. Phys. JAPIAU 0021-8979 101, 053106 (2007). 10.1063/1.2437122
5. Transparent Conductive Zinc Oxide, edited by, K. Ellmer, A. Klein, and, B. Rech, (Springer, Berlin, Germany, 2008), Vol. 104.
6. W. S. Lau and S. J. Fonash, J. Electron. Mater. JECMA5 0361-5235 16, 141 (1987). 10.1007/BF02655478
7. S. M. George, A. W. Ott, and J. W. Klaus, J. Phys. Chem. JPCHAX 0022-3654 100, 13121 (1996). 10.1021/jp9536763
8. J. W. Elam and S. M. George, Chem. Mater. CMATEX 0897-4756 15, 1020 (2003). 10.1021/cm020607+
9. J. W. Elam, D. Routkevitch, and S. M. George, J. Electrochem. Soc. JESOAN 0013-4651 150, G339 (2003). 10.1149/1.1569481
10. J. W. Elam, Z. A. Sechrist, and S. M. George, Thin Solid Films THSFAP 0040-6090 414, 43 (2002). 10.1016/S0040-6090(02)00427-3
11. E. Guziewicz, I. A. Kowalik, M. Godlewski, K. Kopalko, V. Osinniy, A. Wojcik, S. Yatsunenko, E. Lusakowska, W. Paszkowicz, and M. Guziewicz, J. Appl. Phys. JAPIAU 0021-8979 103, 033515 (2008). 10.1063/1.2836819
12. P. C. Rowlette, C. G. Allen, O. B. Bromley, A. E. Dubetz, and C. A. Wolden, Chem. Vapor Deposition 15, 15 (2009). 10.1002/cvde.200806725
13. Q. H. Li, D. L. Zhu, W. J. Liu, Y. Liu, and X. C. Ma, Appl. Surf. Sci. ASUSEE 0169-4332 254, 2922 (2008). 10.1016/j.apsusc.2007.09.104
14. See supplementary material at http://dx.doi.org/10.1063/1.3466987 E-JAPIAU-108-062015 for (EDX data showing Zn ti Si peak ratio used to normalize XRD data).
15. J. Mass, P. Bhattacharya, and R. S. Katiyar, Mater. Sci. Eng., B MSBTEK 0921-5107 103, 9 (2003). 10.1016/S0921-5107(03)00127-2
16. J. G. Lu, S. Fujita, T. Kawaharamura, H. Nishinaka, Y. Kamada, T. Ohshima, Z. Z. Ye, Y. J. Zeng, Y. Z. Zhang, L. P. Zhu, H. P. He, and B. H. Zhao, J. Appl. Phys. JAPIAU 0021-8979 101, 083705 (2007). 10.1063/1.2721374
17. S. Y. Pung, K. L. Choy, X. Hou, and C. X. Shan, Nanotechnology NNOTER 0957-4484 19, 435609 (2008). 10.1088/0957-4484/19/43/435609
18. E. B. Yousfi, J. Fouache, and D. Lincot, Appl. Surf. Sci. ASUSEE 0169-4332 153, 223 (2000). 10.1016/S0169-4332(99)00330-X
19. D. Lide, CRC Handbook of Chemistry and Physics, 88th ed. (CRC, Boca Raton, FL, 2007).
20. S. Yoshioka, F. Oba, R. Huang, I. Tanaka, T. Mizoguchi, and T. Yamamoto, J. Appl. Phys. JAPIAU 0021-8979 103, 014309 (2008). 10.1063/1.2829785
21. M. H. Yoon, S. H. Lee, H. L. Park, H. K. Kim, and M. S. Jang, J. Mater. Sci. Lett. JMSLD5 0261-8028 21, 1703 (2002). 10.1023/A:1020841213266
22. J. Hüpkes, B. Rech, S. Calnan, O. Kluth, U. Zastrow, H. Siekmann, and M. Wuttig, Thin Solid Films THSFAP 0040-6090 502, 286 (2006). 10.1016/j.tsf.2005.07.298
23. R. E. Hummel, Electronic Properties of Materials, 2nd ed. (Springer-Verlag, Berlin, Germany, 1993).
24. J. G. Lu, Z. Z. Ye, Y. J. Zeng, L. P. Zhu, L. Wang, J. Yuan, B. H. Zhao, and Q. L. Liang, J. Appl. Phys. JAPIAU 0021-8979 100, 073714 (2006). 10.1063/1.2357638
25. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. JAPIAU 0021-8979 89, 5243 (2001). 10.1063/1.1361065
26. E. Burstein, Phys. Rev. PHRVAO 0031-899X 93, 632 (1954). 10.1103/PhysRev.93.632
27. T. S. Moss, Proc. Phys. Soc. London, Sect. B PPSBAP 0370-1301 67, 775 (1954). 10.1088/0370-1301/67/10/306
28. V. K. Miloslavskii and P. S. Pogrebniak, Phys. Status Solidi B PSSBBD 0370-1972 51, K99 (1972). 10.1002/pssb.2220510252
29. R. K. Shukla, A. Srivastava, and K. C. Dubey, J. Cryst. Growth JCRGAE 0022-0248 294, 427 (2006). 10.1016/j.jcrysgro.2006.06.035
30. J. H. Wang, L. Meng, Y. Qi, M. L. Li, G. M. Shi, and M. L. Liu, J. Cryst. Growth JCRGAE 0022-0248 311, 2305 (2009). 10.1016/j.jcrysgro.2009.02.039
31. K. F. Berggren and B. E. Sernelius, Phys. Rev. B PLRBAQ 0556-2805 24, 1971 (1981). 10.1103/PhysRevB.24.1971