Ti-electrode effects of NiO based resistive switching memory with Ni insertion layer

Applied Physics Letters

Volumn 100, Issue 13, 2012, Pages

  Ryu, Seung Wook ^a   Ahn, Young Bae ^b   Kim, Hyeong Joon ^b   Nishi, Yoshio ^a  

^a Stanford University   (United States)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CURVE; ELECTRO-THERMAL SIMULATION; FORMING PROCESS; I - V CURVE; INSERTION LAYERS; LOW-RESISTANCE STATE; RESET CURRENTS; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; RESISTIVE SWITCHING MEMORIES; SET OPERATION;

SWITCHING SYSTEMS; THERMAL CONDUCTIVITY;

PLATINUM;

EID: 84859540703     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3697691     Document Type: Article

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