Bipolar resistive switching with self-rectifying effects in Al/ZnO/Si structure

Journal of Applied Physics

Volumn 111, Issue 1, 2012, Pages

  Chen, C ^a   Pan, F ^a   Wang, Z S ^a   Yang, J ^a   Zeng, F ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CONDUCTION MECHANISM; CURRENT VOLTAGE CURVE; ELECTRICAL CHARACTERISTIC; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; MEMORY STRUCTURE; OXYGEN IONS; POOLE-FRENKEL EMISSION; RESISTIVE SWITCHING; SPACE-CHARGE-LIMITED;

ARRHENIUS PLOTS; METALLIC COMPOUNDS; MOS DEVICES;

SWITCHING SYSTEMS;

EID: 84862933503     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3672811     Document Type: Article

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