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Volumn 100, Issue 19, 2012, Pages

Multi-state resistive switching memory with secure information storage in Au/BiFe 0.95Mn 0.05O 3/La 5/8Ca 3/8MnO 3 heterostructure

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE FILAMENTS; FERROELECTRIC POLARIZATION; FERROELECTRIC STATE; HIGH-DENSITY; MULTI-STATE; RESISTIVE SWITCHING BEHAVIORS; RESISTIVE SWITCHING MECHANISMS; RESISTIVE SWITCHING MEMORIES;

EID: 84862106011     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4714514     Document Type: Article
Times cited : (32)

References (28)
  • 1
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    • A. Sawa, Mater. Today 11, 28 (2008). 10.1016/S1369-7021(08)70119-6
    • (2008) Mater. Today , vol.11 , pp. 28
    • Sawa, A.1
  • 13
    • 77957693621 scopus 로고    scopus 로고
    • 10.1016/j.tsf.2010.08.004
    • S. W. Chen and J. M. Wu, Thin Solid Films 519, 499 (2010). 10.1016/j.tsf.2010.08.004
    • (2010) Thin Solid Films , vol.519 , pp. 499
    • Chen, S.W.1    Wu, J.M.2
  • 19
    • 80052783414 scopus 로고    scopus 로고
    • 10.1103/PhysRevLett.107.127601
    • S. Farokhipoor and B. Noheda, Phys. Rev. Lett. 107, 127601 (2011). 10.1103/PhysRevLett.107.127601
    • (2011) Phys. Rev. Lett. , vol.107 , pp. 127601
    • Farokhipoor, S.1    Noheda, B.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.