Electroforming, magnetic and resistive switching in MgO-based tunnel junctions

Journal of Physics D: Applied Physics

Volumn 42, Issue 10, 2009, Pages

  Teixeira, J M ^a   Ventura, J ^a   Fermento, R ^a   Araujo, J P ^a   Sousa, J B ^a   Wisniowski, P ^b,c   Freitas, P P ^b  

^a UNIVERSITY OF PORTO   (Portugal)

^b INESC   (Portugal)

^c AGH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; ELECTRICAL FIELD; ELECTRICAL RESISTANCES; MAGNETIC MEMORIES; MAGNETIC TUNNEL JUNCTION; NON-VOLATILE; NONMAGNETICS; RESISTIVE SWITCHING;

ELECTRIC RESISTANCE; ELECTROCHEMISTRY; ELECTROFORMING; ELECTROMETALLURGY; MAGNETIC FIELD EFFECTS; MAGNETIC STORAGE; MAGNETISM; MAGNETORESISTANCE; SEMICONDUCTOR JUNCTIONS; SWITCHING SYSTEMS; TUNNEL JUNCTIONS; TUNNELS; WIND TUNNELS;

SWITCHING;

EID: 70149121465     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/10/105407     Document Type: Article

References (31)

1. Zhu J-G and Park C 2006 Mater. Today 11 36
2. Yuasa S and Djayaprawira D D 2007 J. Phys. D: Appl. Phys. 40 R337
3. Parkin S S P, Kaiser C, Panchula A, Rice P M, Hughes B, Samant M and Yang S H 2004 Nat. Mater. 3 862
4. Yuasa S, Nagahama T, Fukushima A, Suzuki Y and Ando K 2004 Nat. Mater. 3 868
5. Butler W H, Zhang X-G, Schulthess T C and MacLaren J M 2001 Phys. Rev. B 63 054416
6. Mathon J and Umerski A 2001 Phys. Rev. B 63 220403
7. Ikeda S, Hayakawa J, Ashizawa Y, Lee Y M, Miura K, Hasegawa H, Tsunoda M, Matsukura F and Ohno H 2008 Appl. Phys. Lett. 93 082508
8. Ventura J, Araujo J P, Sousa J B, Liu Y, Zhang Z and Freitas P P 2006 IEEE Trans. Nanotechnol. 5 142
9. Ventura J, Sousa J B, Liu Y, Zhang Z and Freitas P P 2005 Phys. Rev. B 72 094432
10. Ventura J, Pereira A M, Araujo J P, Sousa J B, Zhang Z, Liu Y and Freitas P P 2007 J. Phys. D: Appl. Phys. 40 5819
11. Halley D, Majjad H, Bowen M, Najjari N, Henry Y, Ulhaq-Bouillet C, Weber W, Bertoni G, Verbeeck J and Tendeloo G V 2008 Appl. Phys. Lett. 92 212115
12. Yoshida C, Kurasawa M, Lee Y M, Aoki M and Sugiyama Y 2008 Appl. Phys. Lett. 92 113508
13. Ventura J, Zhang Z, Liu Y, Sousa J B and Freitas P P 2007 J. Phys.: Condens. Matter 19 176207
14. Jo S and Lu W 2008 Nano Lett. 8 392
15. Lv H, Yin M, Song Y, Fu X, Tang L, Zhou P, Zhao C, Tang T, Chen B and Lin Y 2008 IEEE Electron Dev. Lett. 29 47
16. Shima H, Takano F, Muramatsu H, Akinaga H, Tamai Y, Inque I H and Takagi H 2008 Appl. Phys. Lett. 93 113504
17. Villafuerte M, Heluani S P, Juarez G, Simonelli G, Braunstein G and Duhalde S 2007 Appl. Phys. Lett. 90 052105
18. Kim D C et al 2006 Appl. Phys. Lett. 88 202102
19. Yoshida C, Kinoshita K, Yamasaki T and Sugiyama Y 2008 Appl. Phys. Lett. 93 042106
20. Choi B J et al 2005 J. Appl. Phys. 98 033715
21. Jeong K W, Do Y H, Yoon K S, Kim C O and Hong J P 2006 J. Korean Phys. Soc. 48 1501
22. Dearnaley G, Bednorz J G and Stoneham A M 1970 J. Non-Cryst. Solids 7 593
23. Nian Y B, Strozier J, Wu N J, Chen X and Ignatiev A 2007 Phys. Rev. Lett. 98 146403
24. Tsui S, Baikalov A, Cmaidalka J, Sun Y Y, Wang Y Q, Xue Y Y, Chu C W, Chen L and Jacobson A J 2004 Appl. Phys. Lett. 85 317
25. Yang J J, Pickett M D, Li X, Ohlberg D A A, Stewart D R and Williams R S 2008 Nat. Nanotechnol. 3 429
26. Thurstans R E and Oxley D P 2002 J. Phys. D: Appl. Phys. 35 802
27. Dearnaley G, Stoneham A M and Morgan D V 1970 Rep. Prog. Phys. 33 1129
28. Ventura J, Ferreira R, Araujo J P, Sousa J B and Freitas P P 2007 Appl. Phys. Lett. 90 032501
29. Ventura J, Teixeira J M, Araujo J P, Sousa J B, Wisniowski P and Freitas P P 2008 Phys. Rev. B 78 024403
30. Pedersen R J and Vernon F L 1967 Appl. Phys. Lett. 10 29
31. Moodera J S, Kinder L R, Nowak J, LeClair P and Meservey R 1996 Appl. Phys. Lett. 69 708