Performance and reliability characteristics of 1200 V, 100 A, 200°C half-bridge SiC MOSFET-JBS diode power modules

International Conference and Exhibition on High Temperature Electronics 2010, HiTEC 2010

Volumn , Issue , 2010, Pages 289-296

  Scofield, James D ^a   Merrett, J Neil ^a   Richmond, James ^b   Agarwal, Anant ^b   Leslie, Scott ^c  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b Arkansas Power Electronics International Inc   (United States)

^c POWEREX INC   (United States)

Author keywords

High temperature; Reliability testing; SiC MOSFET; SiC power module

Indexed keywords

ENVIRONMENTAL REQUIREMENT; HIGH TEMPERATURE; PERFORMANCE AND RELIABILITIES; POWER MODULE; RELIABILITY TESTING; SIC MOSFET; SILICON CARBIDE MOSFETS; THERMAL EXPANSION COEFFICIENTS;

CHIP SCALE PACKAGES; DESIGN; ELECTRIC POWER SYSTEMS; PACKAGING MATERIALS; RELIABILITY; SILICON CARBIDE;

MOSFET DEVICES;

EID: 84878217800     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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