-
3
-
-
0004286686
-
-
John Wiley & Sons, New York
-
B.J. Baliga, Modern Power Devices, John Wiley & Sons, New York, 1987. ISBN 0-471-63781-5.
-
(1987)
Modern Power Devices
-
-
Baliga, B.J.1
-
6
-
-
84916393741
-
-
Springer-Verlag, Berlin
-
W. Gerlach, Thyristoren, Reihe Halbleiter-Elektronik, Band 12, Springer-Verlag, Berlin, 1979. ISBN 3-540-09438-5.
-
(1979)
Thyristoren, Reihe Halbleiter-Elektronik, Band
, vol.12
-
-
Gerlach, W.1
-
7
-
-
0003569807
-
-
2nd ed., Wiley, New York
-
N. Mohan, T. M. Undeland, W. P. Robbins, Power Electronics – Converters, Applications, and Design, 2nd ed., Wiley, New York, 1995. ISBN 0-471-58408-8.
-
(1995)
Power Electronics – Converters, Applications, and Design
-
-
Mohan, N.1
Undeland, T.M.2
Robbins, W.P.3
-
8
-
-
84936896634
-
Reverse Recovery Processes in Silicon Power Rectifiers
-
Vol., No
-
H. Benda, E. Spenke, "Reverse Recovery Processes in Silicon Power Rectifiers", Proc. IEEE, Vol. 55, No. 8, 1331-1354 (1967).
-
(1967)
Proc. IEEE
, vol.55
, Issue.8
, pp. 1331-1354
-
-
Benda, H.1
Spenke, E.2
-
10
-
-
0016543933
-
The Standard Thermodynamic Function of the Formation of Electrons and Holes in Ge, Si, GaAs, and GaP
-
C. D. Thurmond, "The Standard Thermodynamic Function of the Formation of Electrons and Holes in Ge, Si, GaAs, and GaP", J. Electrochem. Soc, 122, 1133 (1975).
-
(1975)
J. Electrochem. Soc
, vol.122
, pp. 1133
-
-
Thurmond, C.D.1
-
12
-
-
0004278609
-
-
2nd ed., Cambridge, London
-
R.A. Smith, Semiconductors, 2nd ed., Cambridge, London, 1978.
-
(1978)
Semiconductors
-
-
Smith, R.A.1
-
14
-
-
0039488032
-
-
Wiley, New York
-
W. F. Beadle, J. C. C. Tsai, and R. D. Plummer, Eds., Quick Reference Manual for Semiconductor Engineers, Wiley, New York, 1985.
-
(1985)
Quick Reference Manual for Semiconductor Engineers
-
-
Beadle, W.F.1
Tsai, J.C.C.2
Plummer, R.D.3
-
15
-
-
36149004075
-
Electron-Hole Recombination in Germanium
-
R. N. Hall, "Electron-Hole Recombination in Germanium", Phys. Rev., 87, 387 (1952);
-
(1952)
Phys. Rev.
, vol.87
, pp. 387
-
-
Hall, R.N.1
-
16
-
-
33748621800
-
Statistics of Recombination of Holes and Electrons
-
W. Shockley and W. T. Read, "Statistics of Recombination of Holes and Electrons", Phys. Rev., 87, 835 (1952).
-
(1952)
Phys. Rev.
, vol.87
, pp. 835
-
-
Shockley, W.1
Read, W.T.2
-
17
-
-
0036604529
-
Determination of Parameters of Radiation Induced Traps in Silicon
-
R. Siemieniec, W. Suedkamp, J. Lutz, "Determination of Parameters of Radiation Induced Traps in Silicon", Solid-State Electr., 46, 891-901 (2002).
-
(2002)
Solid-State Electr
, vol.46
, pp. 891-901
-
-
Siemieniec, R.1
Suedkamp, W.2
Lutz, J.3
-
18
-
-
0000765117
-
A Review of the Theory, Technology and Applications of Metal-Semiconductor Rectifiers
-
V. L. Rideout, "A Review of the Theory, Technology and Applications of Metal-Semiconductor Rectifiers", Thin Solid Films, 48, 261 (1978).
-
(1978)
Thin Solid Films
, vol.48
, pp. 261
-
-
Rideout, V.L.1
-
19
-
-
0009509593
-
Carrier Mobilities in Silicon Empirically Related to Doping and Field
-
D. M. Caughey and R. E. Thomas, "Carrier Mobilities in Silicon Empirically Related to Doping and Field", Proc. IEEE, 55, 2192 (1967).
-
(1967)
Proc. IEEE
, vol.55
, pp. 2192
-
-
Caughey, D.M.1
Thomas, R.E.2
-
21
-
-
0001695018
-
Calculation of Avalanche Breakdown of Silicon p-n Junctions
-
W. Fulop, "Calculation of Avalanche Breakdown of Silicon p-n Junctions", Solid State Electron., 10, 39-43 (1967).
-
(1967)
Solid State Electron
, vol.10
, pp. 39-43
-
-
Fulop, W.1
-
22
-
-
0024702631
-
Improved Recovery of Fast Power Diodes with Self-Adjusting p Emitter Efficiency
-
Vol
-
H. Schlangenotto et al., "Improved Recovery of Fast Power Diodes with Self-Adjusting p Emitter Efficiency", IEEE El. Device Letters, Vol. 10, 322-324 (1989).
-
(1989)
IEEE El. Device Letters
, vol.10
, pp. 322-324
-
-
Schlangenotto, H.1
-
23
-
-
84935966514
-
Spreading Velocity of the on-State in High Speed Thyristors
-
T. Matsuzawa, "Spreading Velocity of the on-State in High Speed Thyristors", IEEE Trans. Japan93-C, 16-21 (1973).
-
(1973)
IEEE Trans. Japan
, vol.93-C
, pp. 16-21
-
-
Matsuzawa, T.1
-
24
-
-
0013286639
-
Probed Determination of Turn-on Spread of Large Area Thyristors
-
W. H. Dodson, R. L. Longini, "Probed Determination of Turn-on Spread of Large Area Thyristors", IEEE Trans. ED-13, 478-484 (1966).
-
(1966)
IEEE Trans
, vol.ED-13
, pp. 478-484
-
-
Dodson, W.H.1
Longini, R.L.2
-
25
-
-
0016872391
-
Experimentelle Untersuchung des Einflusses der Kurzschlussemitterdimensionierung auf das Zuendverhalten von Thyristoren
-
H. Strack, "Experimentelle Untersuchung des Einflusses der Kurzschlussemitterdimensionierung auf das Zuendverhalten von Thyristoren", Siemens Forsch. und Entw. Ber. 5, 5-9 (1976).
-
(1976)
Siemens Forsch. Und Entw. Ber.
, vol.5
, pp. 5-9
-
-
Strack, H.1
-
26
-
-
25144432340
-
Untersuchungen ueber den Einschaltvorgang des Leistungsthyristors
-
W. Gerlach, "Untersuchungen ueber den Einschaltvorgang des Leistungsthyristors", Telefunken Zeitung 39, 301-314 (1966).
-
(1966)
Telefunken Zeitung
, vol.39
, pp. 301-314
-
-
Gerlach, W.1
-
27
-
-
84892123455
-
Thyristor mit Querfeld-Emitter
-
W. Gerlach, "Thyristor mit Querfeld-Emitter", Zeitschr. angew. Physik 17, 396-400 (1965).
-
(1965)
Zeitschr. Angew. Physik
, vol.17
, pp. 396-400
-
-
Gerlach, W.1
-
29
-
-
0037258845
-
Analysis of the Snubberless Operation of the Emitter Turn-Off Thyristor
-
Vol, No
-
Y. Li, A. Q. Huang, K. Motto, "Analysis of the Snubberless Operation of the Emitter Turn-Off Thyristor", IEEE Trans. on Power Electronics Vol 18, No. 1 (2003).
-
(2003)
IEEE Trans. on Power Electronics
, vol.18
, Issue.1
-
-
Li, Y.1
Huang, A.Q.2
Motto, K.3
-
30
-
-
0031338882
-
IGCT – A New Emerging Technology for High Power, Low Cost Inverters
-
P. K. Steimer, H. E. Gruening, J. Werninger, E. Carroll, S. Klaka, S. Linder, "IGCT – A New Emerging Technology for High Power, Low Cost Inverters", Proc. IEEE Ind. Applicat. Soc. Annual Meeting, New Orleans, 1592-1599 (1997).
-
(1997)
Proc. IEEE Ind. Applicat. Soc. Annual Meeting, New Orleans
, pp. 1592-1599
-
-
Steimer, P.K.1
Gruening, H.E.2
Werninger, J.3
Carroll, E.4
Klaka, S.5
Linder, S.6
-
31
-
-
0021787429
-
A new Vertical Power MOSFET Structure with Extremely Reduced on-Resistance
-
D. Ueda, H. Takagi, G. Kano, "A new Vertical Power MOSFET Structure with Extremely Reduced on-Resistance", IEEE Trans. Electron Devices, ED-32, 2-6 (1985).
-
(1985)
IEEE Trans. Electron Devices, ED
, vol.32
, pp. 2-6
-
-
Ueda, D.1
Takagi, H.2
Kano, G.3
-
32
-
-
0003142829
-
A New Generation of High Voltage MOSFETs Breaks the Limits of Silicon
-
San Francisco
-
G. Deboy, M. Maerz, J. Stengel, H. Strack, J. Tihanyi, H. Weyer, "A New Generation of High Voltage MOSFETs Breaks the Limits of Silicon", Proc. IEDM 98, San Francisco (1998).
-
(1998)
Proc. IEDM 98
-
-
Deboy, G.1
Maerz, M.2
Stengel, J.3
Strack, H.4
Tihanyi, J.5
Weyer, H.6
-
33
-
-
0021757034
-
Lateral Resurfed COMFET
-
Vol
-
M. Darwish, K. Board, "Lateral Resurfed COMFET", Electron. Lett., Vol. 20, 520 (1984).
-
(1984)
Electron. Lett.
, vol.20
, Issue.520
-
-
Darwish, M.1
Board, K.2
-
34
-
-
0031634409
-
1200V-Trench-IGBT Study with Short Circuit SOA
-
Kyoto
-
T. Laska, F. Pfirsch, F. Hirler, J. Niedermeyr, C. Schaeffer, T. Schmidt, "1200V-Trench-IGBT Study with Short Circuit SOA", Proc. ISPSD'98, 433-436, Kyoto (1998).
-
(1998)
Proc. ISPSD'98
, pp. 433-436
-
-
Laska, T.1
Pfirsch, F.2
Hirler, F.3
Niedermeyr, J.4
Schaeffer, C.5
Schmidt, T.6
-
35
-
-
0031640911
-
1200V Trench Gate NPT-IGBT (IEGT) with Excellent Low On-State Voltage
-
Kyoto
-
T. Takeda, M. Kuwahara, S. Kamata, T. Tsunoda, K. Imamura, S. Nakao, "1200V Trench Gate NPT-IGBT (IEGT) with Excellent Low On-State Voltage", Proc. ISPSD'98, 75-79, Kyoto (1998).
-
(1998)
Proc. ISPSD'98
, pp. 75-79
-
-
Takeda, T.1
Kuwahara, M.2
Kamata, S.3
Tsunoda, T.4
Imamura, K.5
Nakao, S.6
-
36
-
-
0031622354
-
A Novel High-Conductivity IGBT (HiGT) with a Short Circuit Capability
-
Kyoto
-
M. Mori, Y. Uchino, J. Sakano, H. Kobayashi, "A Novel High-Conductivity IGBT (HiGT) with a Short Circuit Capability", Proc. ISPSD'98, 429-432, Kyoto (1998).
-
(1998)
Proc. ISPSD'98
, pp. 429-432
-
-
Mori, M.1
Uchino, Y.2
Sakano, J.3
Kobayashi, H.4
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