Direct comparison of silicon and silicon carbide power transistors in high-frequency hard-switched applications

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn , Issue , 2011, Pages 1049-1056

  Glaser, John S ^a   Nasadoski, Jeffrey J ^a   Losee, Peter A ^a   Kashyap, Avinash S ^a   Matocha, Kevin S ^a   Garrett, Jerome L ^a   Stevanovic, Ljubisa D ^a  

^a GE GLOBAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE DEVICES; ACTIVE POWER; BREAKDOWN VOLTAGE; EXPERIMENTAL EVIDENCE; HIGH FREQUENCY HF; INPUT VOLTAGES; MOSFETS; POWER DENSITIES; POWER DEVICES; POWER DIODE; POWER THROUGHPUT; POWER TRANSISTORS; RECENT PROGRESS; SCHOTTKY; SWITCHING LOSS; TOTAL LOSS; WIDE BAND GAP;

ELECTRIC SWITCHGEAR; ENGINEERING EXHIBITIONS; MOSFET DEVICES; POWER ELECTRONICS; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79955771515     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEC.2011.5744724     Document Type: Conference Paper

References (23)

1. R. Erickson and D. Maksimovic, Fundamentals of Power Electronics. Springer, second ed., January 2001.
2. B. Bose, "Power electronics and motor drives recent progress and perspective," Industrial Electronics, IEEE Transactions on, vol. 56, no. 2, pp. 581-588, 2009.
3. EPC - Efficient Power Conversion, "EPC1010 Datasheet," 2009.
4. GE Global Research, "GE12N15L Datasheet," May 2010.
5. H. Sheng, Z. Chen, F. Wang, and A. Millner, "Investigation of 1.2 kv sic mosfet for high frequency high power applications," in Applied Power Electronics Conference and Exposition (APEC), 2010 Twenty- Fifth Annual IEEE, pp. 1572-1577, 21-25 2010.
6. L. Stevanovic, K. Matocha, P. Losee, J. Glaser, J. Nasadoski, and S. Arthur, "Recent advances in silicon carbide mosfet power devices," in Applied Power Electronics Conference and Exposition (APEC), 2010 Twenty-Fifth Annual IEEE, pp. 401-407, 21-25 2010.
7. T. Zhao, J. Wang, A. Huang, and A. Agarwal, "Comparisons of sic mosfet and si igbt based motor drive systems," in Industry Applications Conference, 2007. 42nd IAS Annual Meeting. Conference Record of the 2007 IEEE, pp. 331-335, 23-27 2007.
8. B. Geil, C. Tipton, and D. Urciuoli, "ARL 400 amp silicon carbide power module," in 2010 NDIA GROUND VEHICLE SYSTEMS ENGINEERING AND TECHNOLOGY SYMPOSIUM, August 2010.
9. J. Richmond, S. Leslie, B. Hull, M. Das, A. Agarwal, and J. Palmour, "Roadmap for megawatt class power switch modules utilizing large area silicon carbide mosfets and jbs diodes," in Energy Conversion Congress and Exposition, 2009. ECCE 2009. IEEE, pp. 106-111, 2009.
10. J. Zolper, "Emerging silicon carbide power electronics components," in Applied Power Electronics Conference and Exposition, 2005. APEC 2005. Twentieth Annual IEEE, vol. 1, pp. 11-17 Vol. 1, 2005.
11. P. Friedrichs, "Silicon carbide power devices - status and upcoming challenges," in Power Electronics and Applications, 2007 European Conference on, pp. 1-11, 2007.
12. B. J. Baliga, Power Semiconductor Devices. PWS Publishing Company, 1996.
13. IXYS Corporation, "IXFH16N120P Datasheet," 2008.
14. Microsemi, "APT14M120B Datasheet," April 2009.
15. Cree, Inc., "C2D10120A Datasheet, Rev. D," 2009.
16. Fairchild Semiconductor Corporation, "HGTG10N120BND, Rev. B," 2001.
17. Infineon Technologies AG, "IPW90R340C3 Datasheet," July 2008.
18. Infineon Technologies AG, "IGW15N120H3 Datasheet, Rev. 1.1," November 2009.
19. Infineon Technologies AG, "IGW25N120H3 Datasheet, Rev. 1.1," November 2009.
20. B. Hull, M. Das, F. Husna, R. Callanan, A. Agarwal, and J. Palmour, "20 a, 1200 v 4h-sic dmosfets for energy conversion systems," in Energy Conversion Congress and Exposition, 2009. ECCE 2009. IEEE, pp. 112-119, 2009.
21. B. Hull, C. Jonas, S.-H. Ryu, M. Das, M. OLoughlin, F. Husna, R. Callanan, J. Richmond, A. Agarwal, J. Palmour, and C. Scozzie, "Performance of 60 A, 1200 V 4H-SiC DMOSFETs," Materials Science Forum, vol. Silicon Carbide and Related Materials 2008, pp. 749-752, 2009.
22. Z. Chen, D. Boroyevich, R. Burgos, and F. Wang, "Characterization and modeling of 1.2 kv, 20 a sic mosfets," in Energy Conversion Congress and Exposition, 2009. ECCE 2009. IEEE, pp. 1480-1487, 2009.
23. K. Shenai, M. Trivedi, and P. Neudeck, "Characterization of hard- and soft-switching performance of high-voltage si and 4h-sic pin diodes," Electron Devices, IEEE Transactions on, vol. 49, pp. 1648-1656, Sept. 2002.