Electrical and thermal performance of 1200 V, 100 A, 200°C 4H-SiC MOSFET-based power switch modules

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 1119-1122

  Scofield, James ^a   Merrett, Neil ^a   Richmond, Jim ^b   Agarwal, Anant ^b   Leslie, Scott ^c  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b Arkansas Power Electronics International Inc   (United States)

^c POWEREX INC   (United States)

Author keywords

High temperature packaging; Phase leg; Power module; SiC MOSFET

Indexed keywords

DIGITAL STORAGE; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

DYNAMIC CHARACTERIZATION; ELECTRICAL PERFORMANCE; HIGH-TEMPERATURE PACKAGING; JUNCTION BARRIER SCHOTTKY DIODES; PERFORMANCE POTENTIALS; PHASE LEG; POWER MODULE; SIC MOSFET;

MOSFET DEVICES;

EID: 77955439531     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.1119     Document Type: Conference Paper

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