20 A, 1200 V 4H-SiC DMOSFETs for energy conversion systems

2009 IEEE Energy Conversion Congress and Exposition, ECCE 2009

Volumn , Issue , 2009, Pages 112-119

  Hull, Brett ^a   Callanan, Robert ^a   Das, Mrinal ^a   Agarwal, Anant ^a   Husna, Fatima ^a   Palmour, John ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

Power conversion; Power MOSFET; SiC

Indexed keywords

DMOSFET; ENERGY CONVERSION SYSTEMS; GATE CHARGES; HIGHER FREQUENCIES; HIGHER JUNCTION TEMPERATURES; MOSFETS; ORDERS OF MAGNITUDE; PERFORMANCE COMPARISON; POWER CONVERSION; POWER MOSFET; SI MOSFET; SWITCHING ENERGY; SWITCHING LOSS;

ENERGY CONVERSION; ENERGY DISSIPATION; LEAKAGE CURRENTS; MOSFET DEVICES; SILICON; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 72449160038     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2009.5316036     Document Type: Conference Paper

References (3)

1. 2, 1.8 kV 4H-SiC DMOSFETs," Mater. Sci. Forum, 527-529, 1261-1264 (2006).
2. B. Hull, M. Das, S.-H. Ryu, A. Agarwal, S. Haney, C. Jonas, C. Capell, L. Hall, J. Richmond, R. Callanan, F. Husna, A. Lelis, B. Geil, and C. Scozzie, "Status of 1200 V 4H-SiC Power DMOSFETs," presented at the 2007 International Semiconductor Device Research Symposium at the University of Maryland.
3. Cree part number C2D10120D 10 A, 1200 V 4H-SiC JBS Diode datasheet, http://www.cree.com/products/pdf/C2D10120D.pdf.