-
1
-
-
0027837902
-
6H-silicon carbide power devices for aerospace applications
-
J. W. Palmour, J. A. Edmond, H. S. Kong and C. H. Carter Jr., "6H-silicon carbide power devices for aerospace applications," in Proc. 28th Intersociety Energy Conversion Energy Conf, pp.1249-1254, 1993.
-
(1993)
Proc. 28th Intersociety Energy Conversion Energy Conf
, pp. 1249-1254
-
-
Palmour, J.W.1
Edmond, J.A.2
Kong, H.S.3
Carter Jr., C.H.4
-
2
-
-
0031357365
-
The Planar 6H-SiC ACCUFET: A NEW High-Voltage Power MOSFET Structure
-
December
-
Praveen M. Shenoy and B. Jayant Baliga, "The Planar 6H-SiC ACCUFET: A NEW High-Voltage Power MOSFET Structure", IEEE Electron Device Lett, vol. 18, No. 12, pp. 589-591, December 1997
-
(1997)
IEEE Electron Device Lett
, vol.18
, Issue.12
, pp. 589-591
-
-
Shenoy, P.M.1
Jayant Baliga, B.2
-
3
-
-
0034829561
-
Large area 4H-SiC power MOSFETs
-
June
-
A.Agarwal, Sei-Hyung Ryu, M.Das, etc, "Large area 4H-SiC power MOSFETs," Proceedings of the 13th International Symposium on Power Semiconductor Devices and ICs, 2001. ISPSD '01, pp. 183 - 186. June 2001.
-
(2001)
Proceedings of the 13th International Symposium on Power Semiconductor Devices and ICs, 2001. ISPSD '01
, pp. 183-186
-
-
Agarwal, A.1
Hyung Ryu, S.2
Das, M.3
etc4
-
4
-
-
0036610081
-
High-Voltage (3 kV) UMOSFETS in 4H-SiC
-
June
-
Y. Li, J. A. Cooper, Jr., and M. A. Capano, "High-Voltage (3 kV) UMOSFETS in 4H-SiC", IEEE Trans. Electron Devices, vol. 49, No. 6, pp. 972-975, June 2002.
-
(2002)
IEEE Trans. Electron Devices
, vol.49
, Issue.6
, pp. 972-975
-
-
Li, Y.1
Cooper Jr., J.A.2
Capano, M.A.3
-
5
-
-
0036045971
-
High-Voltage UMOSFETs in 4H-SiC
-
Santa Fe, NM, June 3-7
-
I. A. Khan, J. A. Cooper, Jr., M. A. Capano, T. Isaacs-Smith, and J. R. Williams, "High-Voltage UMOSFETs in 4H-SiC", International Symposium on Power Semiconductor Devices, pp. 157-160, Santa Fe, NM, June 3-7, 2002.
-
(2002)
International Symposium on Power Semiconductor Devices
, pp. 157-160
-
-
Khan, I.A.1
Cooper Jr., J.A.2
Capano, M.A.3
Isaacs-Smith, T.4
Williams, J.R.5
-
6
-
-
4043056609
-
10-kV, 123-m/spl Omega//spl middot/cm/sup 2/4H-SiC power DMOSFETs
-
Aug
-
Sei-Hyung Ryu, S. Krishnaswami, M. O'Loughlin, etc, "10-kV, 123-m/spl Omega//spl middot/cm/sup 2/4H-SiC power DMOSFETs", IEEE Electron Device Letters, vol 25, Issue 8, pp. 556 - 558, Aug. 2004
-
(2004)
IEEE Electron Device Letters
, vol.25
, Issue.8
, pp. 556-558
-
-
Sei-Hyung Ryu, S.1
Krishnaswami, M.O.2
etc3
-
7
-
-
0028485501
-
Power semiconductor devices for variable-frequency drives
-
Aug
-
B. Jayant Baliga, "Power semiconductor devices for variable-frequency drives," Proceedings of the IEEE, vol 82, Issue 8, pp. 1112 - 1122, Aug. 1994
-
(1994)
Proceedings of the IEEE
, vol.82
, Issue.8
, pp. 1112-1122
-
-
Jayant Baliga, B.1
-
8
-
-
0041657448
-
Development and demonstration of silicon carbide (SiC) motor drive inverter modules
-
H.-R. Chang, E. Hanna, and A.V. Radun, "Development and demonstration of silicon carbide (SiC) motor drive inverter modules," Power Electronics Specialist Conference, 2003. PESC '03, vol. 1, pp. 211-216
-
Power Electronics Specialist Conference, 2003. PESC '03
, vol.1
, pp. 211-216
-
-
Chang, H.-R.1
Hanna, E.2
Radun, A.V.3
-
10
-
-
0036053764
-
27 m/spl Omega/-cm/sup 2/, 1.6 kV power DiMOSFETs in 4H-SiC
-
June
-
Sei-Hyung Ryu, Anant Agarwal etc., "27 m/spl Omega/-cm/sup 2/, 1.6 kV power DiMOSFETs in 4H-SiC," Proceedings of the 14th International Symposium on Power Semiconductor Devices and ICs, pp. 65 - 68, June 2002.
-
(2002)
Proceedings of the 14th International Symposium on Power Semiconductor Devices and ICs
, pp. 65-68
-
-
Ryu, S.-H.1
Agarwal, A.2
-
11
-
-
0029537391
-
Semiconductor power losses in AC inverters
-
Ken Berringer, Jeff Marvin and Philippe Perruchoud, "Semiconductor power losses in AC inverters," Conference Record of the 1995 IEEE Industry Applications Conference, 1995. vol. 1, pp. 882 - 888.
-
(1995)
Conference Record of the 1995 IEEE Industry Applications Conference
, vol.1
, pp. 882-888
-
-
Berringer, K.1
Marvin, J.2
Perruchoud, P.3
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