Design consideration of high temperature SiC power modules

IECON Proceedings (Industrial Electronics Conference)

Volumn , Issue , 2008, Pages 2861-2866

  Grummel, Brian ^a   McClure, Ryan ^a   Zhou, Lei ^a   Gordon, Ali P ^a   Chow, Louis ^a   Shen, Z John ^a  

^a University of Central Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHIP SCALE PACKAGES; COOLING SYSTEMS; ELECTRIC CONDUCTIVITY; HYBRID MATERIALS; INDUSTRIAL ELECTRONICS; OPTICAL DEVICES; PACKAGING MATERIALS; POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; THERMAL EXPANSION;

A COEFFICIENTS; COOLING COMPONENTS; DESIGN CONSIDERATIONS; FINITE ELEMENT MODELS; HIGH CURRENTS; HIGH OPERATING TEMPERATURES; HIGH TEMPERATURES; HIGH VOLTAGES; HIGH-TEMPERATURE PACKAGING; HIGH-TEMPERATURE STABILITIES; HYBRID POWER; JUNCTION TEMPERATURES; LEAD FRAMES; LEADFRAME; MECHANICAL MODELING; NEW CONCEPTS; POWER CONVERSIONS; POWER ELECTRONIC SYSTEMS; POWER MODULES; POWER SEMICONDUCTORS; SEMICONDUCTOR CHIPS; SILICON-BASED; WIDE-BAND GAP SEMICONDUCTORS;

SEMICONDUCTOR MATERIALS;

EID: 63149135055     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IECON.2008.4758413     Document Type: Conference Paper

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